| PART |
Description |
Maker |
| FQPF9N90C FQP9N90C |
900V N-Channel Advance Q-FET C-Series
900V N-CHANNEL MOSFET
|
FAIRCHILD[Fairchild Semiconductor]
|
| FQPF6N90C FQP6N90C |
900V N-Channel Advance Q-FET C-Series
900V N-Channel MOSFET
|
FAIRCHILD[Fairchild Semiconductor]
|
| FQA6N90C |
900V N-Channel Advance Q-FET C-Series
|
Fairchild Semiconductor
|
| FQPF8N60CT |
600V N-Channel Advance Q-FET C-Series; Package: TO-220F; No of Pins: 3; Container: Rail
|
FAIRCHILD SEMICONDUCTOR CORP
|
| STU8NB90 6380 |
N-CHANNEL 900V - 0.7 Ohm - 8.9A - Max220 PowerMESH MOSFET
OLD PRODUCT: NOT SUITABLE FOR NEW DESIGN-IN
N-CHANNEL 900V - 0.7 - 8.9A - Max220 PowerMESH TM MOSFET
N-CHANNEL 900V - 0.7ohm - 8.9A - Max220 PowerMESH MOSFET
From old datasheet system
|
SGS Thomson Microelectronics
STMICROELECTRONICS[STMicroelectronics]
|
| IRFBF20L IRFBF20S IRFBF20STRL IRFBF20STRR |
Power MOSFET(Vdss=900V, Rds(on)=8.0ohm, Id=1.7A) 功率MOSFET（减振钢板基本\u003d 900V，的Rds（on）\u003d 8.0ohm，身份证\u003d 1.7A
900V Single N-Channel HEXFET Power MOSFET in a TO-262 package
900V Single N-Channel HEXFET Power MOSFET in a D2-Pak package
|
International Rectifier, Corp.
IRF[International Rectifier]
|
| FQI10N60C FQB10N60C FQB10N60CTM FQI10N60CTU |
600V N-Channel MOSFET
600V N-Channel Advance Q-FET C-Series
|
http://
FAIRCHILD[Fairchild Semiconductor]
|
| FQP9N50C FQPF9N50C FQPF9N50CT |
500V N-Channel MOSFET
500V N-Channel Advance Q-FET C-Series
|
FAIRCHILD[Fairchild Semiconductor]
|
| FQI6N40C FQB6N40C FQB6N40CTM FQI6N40CTU |
400V N-Channel MOSFET
400V N-Channel Advance Q-FET C-Series
|
FAIRCHILD[Fairchild Semiconductor]
|
| FQA7N80C |
800V N-Channel MOSFET 7 A, 800 V, 1.9 ohm, N-CHANNEL, Si, POWER, MOSFET
800V N-Channel Advance Q-FET C-Series
|
Fairchild Semiconductor, Corp.
FAIRCHILD[Fairchild Semiconductor]
|
