| PART |
Description |
Maker |
| FQPF9N25C FQP9N25C FQP9N25CTSTU |
250V N-Channel MOSFET 8.8 A, 250 V, 0.43 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
250V N-Channel Advance Q-FET C-Series
|
Fairchild Semiconductor, Corp.
FAIRCHILD[Fairchild Semiconductor]
|
| STS1C1S250 |
N-CHANNEL 250V - 0.9Ohm - 0.75A SO-8 P-CHANNEL 250V - 2.1Ohm - 0.6A SO-8 MESH OVERLAY POWER MOSFET
|
STMICROELECTRONICS[STMicroelectronics]
|
| IRF614B IRF614BFP001 |
250V N-Channel B-FET / Substitute of IRF614 & IRF614A
250V N-Channel MOSFET
|
FAIRCHILD[Fairchild Semiconductor]
|
| IRFP264 IRFP264PBF |
250V Single N-Channel HEXFET Power MOSFET in a TO-247AC package
Power MOSFET(Vdss=250V, Rds(on)=0.075ohm, Id=38A) 功率MOSFET（减振钢板基本\u003d 250V，的Rdson）\u003d 0.075ohm，身份证\u003d 38A条）
|
IRF[International Rectifier]
International Rectifier, Corp.
|
| IRFU214A IRFR214A |
TRANSISTOR | MOSFET | N-CHANNEL | 250V V(BR)DSS | 2.2A I(D) | TO-251AA
TRANSISTOR | MOSFET | N-CHANNEL | 250V V(BR)DSS | 2.2A I(D) | TO-252AA 晶体管| MOSFET的| N沟道| 250V五（巴西）直| 2.2AI（四）|52AA
|
Intersil, Corp.
|
| IRC634 |
250V Single N-Channel HEXFET Power MOSFET in a TO-220 5-Pin (HEXSense) package
Power MOSFET(Vdss=250V, Rds(on)=0.45ohm, Id=8.1A)
|
IRF[International Rectifier]
|
| IRFM214B IRFM214BTFFP001 |
250V N-Channel B-FET / Substitute of IRFM214A
250V N-Channel MOSFET
|
FAIRCHILD[Fairchild Semiconductor]
|
| IRFW614B IRFI614B IRFI614BTUFP001 IRFW614BTMFP001 |
250V N-Channel B-FET / Substitute of IRFW614A
250V N-Channel MOSFET
250V N-Channel B-FET / Substitute of IRFI614A
|
FAIRCHILD[Fairchild Semiconductor]
|
| IRF634S IRF634STRL IRF634STRR |
250V Single N-Channel HEXFET Power MOSFET in a D2-Pak package
Power MOSFET(Vdss=250V, Rds(on)=0.45ohm, Id=8.1A)
Power MOSFET(Vdss=250V/ Rds(on)=0.45ohm/ Id=8.1A)
|
IRF[International Rectifier]
|
| FQT2P25 FQT2P25TF |
250V P-Channel QFET
250V P-Channel MOSFET
|
Fairchild Semiconductor
|
