PART |
Description |
Maker |
BYW51-200 |
8A, 100V - 200V Ultrafast Dual Diodes(8A, 100V - 200V 超快速二极管) 8 A, 200 V, SILICON, RECTIFIER DIODE, TO-220AB
|
ON Semiconductor
|
IRF240 |
200V Single N-Channel Hi-Rel MOSFET in a TO-204AE package HEXFET?TRANSISTORS 200V, N-CHANNEL REPETITIVE AVALANCHE AND dv/dt RATED
|
IRF[International Rectifier]
|
MRF6S9060NR1 MRF6S9060MR1 MRF6S9060NBR1 MRF6S9060M |
RF Power Field Effect Transistors CAP 10PF 200V 200V X7R RAD.20 .20X.20 BULK P-MIL-PRF-39014 CAP CER .10UF 100V 20% AXIAL
|
Freescale (Motorola) 飞思卡尔半导体(中国)有限公司
|
FQPF19N20C FQP19N20C FQP19N20CTSTU |
200V N-Channel Advance Q-FET C-Series 200V N-Channel MOSFET
|
FAIRCHILD[Fairchild Semiconductor]
|
FQP10N20C FQPF10N20C |
200V N-Channel Advance Q-FET C-Series 200V N-Channel MOSFET
|
Fairchild Semiconductor
|
FQI10N20C FQB10N20C FQB10N20CTM FQI10N20CTU |
200V N-Channel MOSFET 200V N-Channel Advance QFET C-series
|
Fairchild Semiconductor Corporation FAIRCHILD[Fairchild Semiconductor]
|
FQD10N20C FQU10N20C FQD10N20CTM FQD10N20CTF FQU10N |
200V N-Channel Advance Q-FET C-Series 200V N-Channel MOSFET
|
FAIRCHILD[Fairchild Semiconductor] Fairchild Semiconductor Corporation
|
IRFU230B IRFR230B IRFU230BTLTUFP001 |
200V N-Channel B-FET / Substitute of IRFU230A 200V N-Channel MOSFET
|
FAIRCHILD[Fairchild Semiconductor]
|
IRFW620B IRFI620B IRFI620BTUFP001 IRFW620BTMFP001 |
200V N-Channel B-FET / Substitute of IRFW620A 200V N-Channel MOSFET 200V N-Channel B-FET / Substitute of IRFI620A
|
FAIRCHILD[Fairchild Semiconductor]
|
IRC640 |
200V Single N-Channel HEXFET Power MOSFET in a TO-220 5-Pin (HEXSense) package Power MOSFET(Vdss=200V, Rds(on)=0.18ohm, Id=18A)
|
IRF[International Rectifier]
|
IRF9610 |
-200V Single P-Channel HEXFET Power MOSFET in a TO-220AB package Power MOSFET(Vdss=-200V, Rds(on)=3.0ohm, Id=-1.8A) Power MOSFET(Vdss=-200V/ Rds(on)=3.0ohm/ Id=-1.8A)
|
IRF[International Rectifier]
|