| PART |
Description |
Maker |
| FSPYE234D1 FSPYE234F4 FN4873 FSPYE234R4 FSPYE234F |
From old datasheet system
Radiation Hardened/ SEGR Resistant N-Channel Power MOSFETs
Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs 9 A, 250 V, 0.215 ohm, N-CHANNEL, Si, POWER, MOSFET
Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs(抗辐N沟道MOS场效应管) 抗辐射，抗SEGR N沟道功率MOSFET（抗辐射沟道马鞍山场效应管）
|
INTERSIL[Intersil Corporation]
Intersil, Corp.
|
| FSPYE230D1 FSPYE230F FSPYE230F4 FSPYE230R4 FN4852 |
From old datasheet system
Radiation Hardened/ SEGR Resistant N-Channel Power MOSFETs
Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs 12 A, 200 V, 0.14 ohm, N-CHANNEL, Si, POWER, MOSFET
|
INTERSIL[Intersil Corporation]
Intersil, Corp.
|
| FSPL230D1 FSPL230F FSPL230F3 FSPL230F4 FSPL230R4 F |
Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs 9 A, 200 V, 0.17 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-205AF
Radiation Hardened/ SEGR Resistant N-Channel Power MOSFETs
|
Intersil, Corp.
INTERSIL[Intersil Corporation]
|
| FSYA450D FSYA450D1 FSYA450D3 FSYA450R4 FSYA450R1 F |
Radiation Hardened/ SEGR Resistant N-Channel Power MOSFETs
Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs 11 A, 500 V, 0.53 ohm, N-CHANNEL, Si, POWER, MOSFET
|
INTERSIL[Intersil Corporation]
Intersil, Corp.
|
| MX043G MX043J MX043 |
Radiation Hardended MOSFET
RADIATION HARDENED SEGR-RESISTANT N-CHANNEL ENHANCEMENT MODE POWER MOSFET
|
MICROSEMI[Microsemi Corporation]
|
| FSS23A0R FSS23A0D FSS23A0D1 FSS23A0D3 FSS23A0R1 FN |
9A, 200V, 0.330 Ohm, Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs 9 A, 200 V, 0.33 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-257AA
From old datasheet system
9A/ 200V/ 0.330 Ohm/ Radiation Hardened/ SEGR Resistant N-Channel Power MOSFETs
|
Intersil, Corp.
INTERSIL[Intersil Corporation]
|
| FSGL130R |
Radiation Hardened / SEGR Resistant N-Channel Power MOSFET
|
Fairchild Semiconductor
|
| FSYE923A0R FSYE923A0R1 FSYE923A0R3 |
Radiation Hardened/ SEGR Resistant P-Channel Power MOSFETs
|
Intersil Corporation
|
| JANSR2N7440 |
10 A, 100 V, P-CHANNEL, Si, POWER, MOSFET
Formerly Available as FSS913A0R4, Radiation Hardened, SEGR Resistant, P-Channel Power MOSFETs
|
HARRIS SEMICONDUCTOR
INTERSIL[Intersil Corporation]
|
| HCTS393MS HCTS393KMSR HCTS393K HCTS393HMSR HCTS393 |
Radiation Hardened Dual 4-Input NOR Gate
Test Bus Controllers 68-CPGA -55 to 125
Test Bus Controllers 68-CFP -55 to 125
Radiation Hardened Octal D-Type Flip-Flop/ Three-State/ Positive Edge Triggered
Radiation Hardened Dual 4-Stage Binary Counter
From old datasheet system
|
INTERSIL[Intersil Corporation]
|
| IRHLUB7930Z4 IRHLUB7970Z410 JANSR2N7626UB |
RADIATION HARDENED
RADIATION HARDENED LOGIC LEVEL POWER MOSFET SURFACE MOUNT (UB)
|
International Rectifier
|
| HS-RTX2010 HS-RTX2010RH HS8-RTX2010RH HS9-RTX2010R |
Radiation Hardened Real Time Express??Microcontroller
Radiation Hardened Real Time ExpressMicrocontroller 16-BIT, 8 MHz, MICROCONTROLLER, CQFP84
Radiation Hardened Real Time ExpressMicrocontroller 16-BIT, 8 MHz, MICROCONTROLLER, UUC84
Dual J-K Positive-Edge-Triggered Flip-Flops With Clear And Preset 16-SOIC 0 to 70
Radiation Hardened Real Time Express Microcontroller
|
Advanced Analogic Technologies, Inc.
Intersil, Corp.
Intersil Corporation
|
