| PART |
Description |
Maker |
| B25856K7505K003 B25856 B25856J0474K003 B25856J7305 |
MKV AC, MKV DC Capacitors LSI Snubbering and Clamping
|
EPCOS[EPCOS]
|
| SDA4AK SDA2AK |
Bidirectional Clamping Diode Bidirektionale Begrenzer-Diode
Surface mount bidirectional Clamping Diodes
|
Diotec Elektronische
DIOTEC[Diotec Semiconductor]
|
| FG1600BX24 FG2000DX24 FG2000DX32 |
THYRISTOR|GTO|1.2KV V(DRM)|TO-200VAR75 晶闸管| GTO的| 1.2KV五（DRM）的|00VAR75
THYRISTOR|GTO|1.2KV V(DRM)|TO-200AE 晶闸管| GTO的| 1.2KV五（DRM）的|00AE
|
Dynex Semiconductor, Ltd.
Fairchild Semiconductor, Corp.
|
| FG3000GX-90DA |
GTO Thyristors
|
Mitsubishi Electric Corporation
|
| NTE4982 NTE4960 NTE4980 NTE4920 NTE4906 NTE4904 NT |
CMD RA 9 CIR JKPOST NOT INSTALLED 浪涌夹紧，单向暂态过电压抑制
Surge Clamping Transient Overvoltage Suppressor Unidirectional
Surge Clamping, Transient Overvoltage Suppressor Unidirectional
|
NTE Electronics, Inc.
NTE[NTE Electronics]
http://
|
| HGT1S14N36G3VL HGT1S14N36G3VLS HGTP14N36G3VL |
14A/ 360V N-Channel/ Logic Level/ Voltage Clamping IGBTs
14A 360V N-Channel Logic Level Voltage Clamping IGBTs
14A, 360V N-CHANNEL, LOGIC LEVEL, VOLTAGE CLAMPING IGBTS
14A, 360V N-Channel,Logic Level, Voltage Clamping IGBTs(14A, 360V N沟道,逻辑电平,电压箝位绝缘栅双极型晶体)
|
INTERSIL[Intersil Corporation]
|
| MBRF1045CT-G MBRF1030CT-G MBRF1060CT-G MBRF10100CT |
Schottky Barrier Rectifiers Diodes, V<sub>RRM</sub>=40V, V<sub>R</sub>=40V, I<sub>O</sub>=10A
Schottky Barrier Rectifiers Diodes, V<sub>RRM</sub>=30V, V<sub>R</sub>=30V, I<sub>O</sub>=10A
Schottky Barrier Rectifiers Diodes, V<sub>RRM</sub>=100V, V<sub>R</sub>=100V, I<sub>O</sub>=10A
|
Comchip Technology
|
| SM8S20A SM8S26A SM8S22A SM8S36A |
Excellent clamping capability
|
Shanghai Semitech Semic...
|
| SMS05C |
Low clamping voltage
|
Shanghai Leiditech Elec...
|
| RLP1N06CLE |
1A/ 55V/ 0.750 Ohm/Voltage Clamping/ Current Limited/ N-Channel Power MOSFET
1A, 55V, 0.750 Ohm,Voltage Clamping, Current Limited, N-Channel Power MOSFET
1A, 55V, 0.750 Ohm,Voltage Clamping,Current Limited, N-Channel Power MOSFET(1A, 55V, 0.750 Ω,电压箝位,电流限定,N沟道功率MOS场效应管)
|
INTERSIL[Intersil Corporation]
|
