| PART |
Description |
Maker |
| 26MB40A 36MB80A 35AMB12026MB 25AMB12026MB 35AMB120 |
SINGLE PHASE BRIDGE 单相桥式
4-Pole Solid State Relay w/o Protection SCR 单相桥式
IC REG LDO 1.0A 1.8V TO-252
IC DAA LITELINK III FW RING DET 3.3V TUBED
equipment to provide connection and isolation to/from the public telephone network
50V Bridge in a D-34A package
SINGLEPHASEBRIDGE
100V Bridge in a D-34A package
1200V Bridge in a D-34A package
400V Bridge in a D-34A package
600V Bridge in a D-34A package
800V Bridge in a D-34A package
1000V Bridge in a D-34A package
|
International Rectifier, Corp.
InternationalRectifier
IRF[International Rectifier]
|
| FGA50N100BNTD |
1000V, 50A NPT-Trench IGBT CO-PAK 50 A, 1000 V, N-CHANNEL IGBT
|
Fairchild Semiconductor, Corp.
|
| BUZ22SMD BUZ22E3045A BUZ22E3046 |
Power MOSFET, 100V,D²PAK , RDSon=0.055 Ohm, 34A, NL
Low Voltage MOSFETs - Power MOSFET, 100V,DPAK , RDSon=0.055 Ohm, 34A, NL
N-Channel SIPMOS Power Transistor
|
Infineon
|
| STY34NB50F |
N-CHANNEL 500V - 0.11 OHM - 34A - MAX247 POWERMESH MOSFET
|
STMicroelectronics
|
| FQD2N100 FQU2N100 FQU2N100TU FQD2N100TF FQD2N100TM |
1000V N-Channel QFET
1000V N-Channel MOSFET
|
FAIRCHILD[Fairchild Semiconductor]
|
| FQH8N100C |
N-Channel QFETMOSFET 1000V, 8.0A, 1.45
1000V N-Channel MOSFET
|
Fairchild Semiconductor
|
| HGT1S11N120CNS HGTP11N120CN HGTG11N120CN HGT1S11N1 |
43A, 1200V, NPT Series N-Channel IGBT 43 A, 1200 V, N-CHANNEL IGBT, TO-263AB
Aluminum Electrolytic Radial Leaded General Purpose Capacitor; Capacitance: 3300uF; Voltage: 25V; Case Size: 16x25 mm; Packaging: Bulk 43 A, 1200 V, N-CHANNEL IGBT, TO-220AB
43A/ 1200V/ NPT Series N-Channel IGBT
43A 1200V NPT Series N-Channel IGBT
|
Fairchild Semiconductor, Corp.
FAIRCHILD[Fairchild Semiconductor]
|
| IXGA12N100AU1 IXGA12N100U1 IXGP12N100AU1 IXGP12N10 |
1000V IGBT
|
IXYS
|
| IXGA4N100 IXGP4N100 |
1000V IGBT
ADVANCED TECHNICAL INFORMATION
|
IXYS Corporation
|
| FGA50N100BNTD2 |
1000V, 50A NPT-Trench IGBT CO-PAK
|
Fairchild Semiconductor
|
| IRG7PG42UD-EPBF |
1000V UltraFast Co-Pack IGBT in a TO-247 package
|
International Rectifier
|
| APT1002R4BN APT1002RBN |
POWER MOS IV 1000V 7.0A 2.00 Ohm / 1000V 6.5A 2.40 Ohm
N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS
|
ADPOW[Advanced Power Technology]
|
