PART |
Description |
Maker |
IRF6720S2TR1PBF09 |
DirectFETPower MOSFET
|
International Rectifier
|
IRF6716MPBF09 |
DirectFETPower MOSFET RoHs Compliant and Halogen Free
|
International Rectifier
|
K4R441869A-NM K4R441869A-MCK8 K4R441869A-NCK7 |
8M X 18 DIRECT RAMBUS DRAM, 45 ns, PBGA62 K4R271669A-N(M):Direct RDRAMData Sheet
|
Samsung Electronic
|
HYMR16416 HYMR16418H-840 |
32Mx16|2.5V|40|-|Direct RDRAM - 64MB RIMM 64M X 18 DIRECT RAMBUS DRAM MODULE, 40 ns, DMA184 RIMM-184
|
Hynix Semiconductor, Inc.
|
MC-4R512FKK8K MC-4R512FKK8K-840 |
512MB 32-bit Direct Rambus DRAM RIMM Module 256M X 18 DIRECT RAMBUS DRAM MODULE, DMA232
|
Elpida Memory, Inc. ELPIDA[Elpida Memory]
|
MC-4R128CPE6C-653 MC-4R128CPE6C-745 MC-4R128CPE6C- |
64M X 16 DIRECT RAMBUS DRAM MODULE, 1.5 ns, DMA184 Direct Rambus DRAM RIMM Module 128M-BYTE (64M-WORD x 16-BIT) Direct Rambus垄芒 DRAM RIMM垄芒 Module 128M-BYTE (64M-WORD x 16-BIT)
|
ELPIDA MEMORY INC
|
SL6649-1 SL6649-KG SL6649-I SL6649-MPEF SL6649-MPE |
200MHz Direct Conversion Downstream Keying (DSK) Data Receiver 200MHz DIRECT CONVERSION FSK DATA RECEIVER 200MHz的直接转换接收FSK数据
|
Zarlink Semiconductor Inc. Zarlink Semiconductor, Inc.
|
KM416RD8AC KM418RD2AC KM418RD2AD KM418RD2C KM418RD |
128/144Mbit RDRAM 256K x 16/18 bit x 2*16 Dependent Banks Direct RDRAMTM 256K x 16 x 32s dependent banks direct RDRAM. Access time: 45 ns, speed: 711 Mbps(356 MHz). 256K x 18 x 32s dependent banks direct RDRAM. Access time: 45 ns, speed: 711 Mbps(356 MHz). 256K x 18 x 32s dependent banks direct RDRAM. Access time: 45 ns, speed: 800 Mbps(400 MHz).
|
Samsung Electronic SAMSUNG[Samsung semiconductor]
|
VSB06P6.5LCI VSB06P12LCI VSB06P05LCI |
Direct ProTek Replacement:VSB06P12LCI Direct ProTek Replacement:VSB06P05LCI 直接太克替代:VSB06P05LCI Direct ProTek Replacement:VSB06P6.5LCI 直接太克替代:VSB06P6.5LCI
|
Microchip Technology, Inc. Vishay Intertechnology, Inc.
|
1121055002 1121115001 |
Brad? Direct-Link? 750&780 Harsh Duty Unmanaged Switches Brad垄莽 Direct-Link垄莽 750&780 Harsh Duty Unmanaged Switches
|
Molex Electronics Ltd.
|