| PART |
Description |
Maker |
| IXGT60N60 IXGH60N60 IXGK60N60 |
Ultra-Low VCE(sat) IGBT
IGBT Discretes: Low Saturation Voltage Types Single IGBT
|
http://
IXYS[IXYS Corporation]
|
| GP801DCS18 |
Chopper Switch Low VCESAT IGBT Module
|
DYNEX[Dynex Semiconductor]
|
| IXGT31N60D1 IXGH31N60D1 |
Ultra-Low VCE(sat) IGBT with Diode(VCES00V，VCE(sat).7V的绝缘栅双极晶体带二极管)) 60 A, 600 V, N-CHANNEL IGBT, TO-247AD
Ultra-Low V IGBT with Diode
|
IXYS, Corp.
IXYS Corporation
|
| PBSS2540M PBSS2540M315 |
40 V, 0.5 A NPN low VCEsat (BISS) transistor; Package: SOT883 (SC-101); Container: Tape reel smd 500 mA, 40 V, NPN, Si, SMALL SIGNAL TRANSISTOR
40 V. 0.5 A NPN low VCEsat (BISS) transistor
|
NXP Semiconductors N.V.
Philips Semiconductors
|
| 60N60 |
Ultra-low Vce(sat) Igbt
|
IXYS Corporation
|
| IXGH38N60 |
Ultra-Low VCE(sat) IGBT
|
IXYS[IXYS Corporation]
|
| BSM400GA120DL 400A12L C67076-A2302-A70 |
IGBT Power Module (Low Loss IGBT Low inductance single switch Including fast free- wheeling diodes) 680 A, 1200 V, N-CHANNEL IGBT
From old datasheet system
|
SIEMENS AG
Infineon
SIEMENS[Siemens Semiconductor Group]
|
| GA150KS61U |
Low Side Switch Chopper Module Ultra-Fast Speed IGBT
|
International Rectifier
|
| 2PD2150 |
20 V, 3 A NPN low VCEsat transistor
20 V, 3 A NPN low VCEsat (BISS) transistor
|
NXP Semiconductors
Philips Semiconductors
|
| GA200TS60U |
HALF-BRIDGE IGBT INT-A-PAK Ultra-Fast Speed IGBT
|
IRF[International Rectifier]
|
| SGH80N60UF SGH80N60 SGH80N60UFTU |
Discrete, High Performance IGBT
Ultra-Fast IGBT
CONNECTOR ACCESSORY
|
FAIRCHILD[Fairchild Semiconductor]
Fairchild Semiconductor Corporation
|
