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K4N51163QC-ZC36 - 512Mbit gDDR2 SDRAM

K4N51163QC-ZC36_1259091.PDF Datasheet
 Full text search : 512Mbit gDDR2 SDRAM

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K4N51163QC-ZC36 K4N51163QC-ZC K4N51163QC-ZC25 K4N5 512Mbit gDDR2 SDRAM
 SAMSUNG[Samsung semiconductor]
K4N51163QC-ZC25 K4N51163QC-ZC36 K4N51163QC-ZC33 K4 ; Filter Type:RFI; Current Rating:180A; Voltage Rating:480V; Series:FN258 RoHS Compliant: Yes 512MB的GDDR2 SDRAM
512Mbit gDDR2 SDRAM
 http://
Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
K4N26323AE-GC25 K4N26323AE-GC20 K4N26323AE-GC22 K4 128Mbit GDDR2 SDRAM 128Mbit GDDR2 SDRAM
4M X 32 DDR DRAM, PBGA144
 Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
K4N56163QF-GC37 K4N56163QF K4N56163QF-GC K4N56163Q 256Mbit gDDR2 SDRAM
 SAMSUNG[Samsung semiconductor]
HYB25D512800AT-6 HYB25D512160AT-6 HYB25D512160AT H 512Mbit Double Data Rate SDRAM
 INFINEON[Infineon Technologies AG]
K4S511632D K4S511632D-KC K4S511632D-KC_L1H K4S5116 32M X 16 SYNCHRONOUS DRAM, 6 ns, PDSO54
DDP 512Mbit SDRAM 8M x 16bit x 4 Banks Synchronous DRAM LVTTL 12兆内00万16 × 4银行同步DRAM LVTTL
 Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
Samsung Electronic
SAMSUNG[Samsung semiconductor]
K4S510432M K4S510432M-TC1H K4S510432M-TC1L K4S5104 32M x 4Bit x 4 Banks Synchronous DRAM Data Sheet
512Mbit SDRAM 32M x 4bit x 4 Banks Synchronous DRAM LVTTL
 Samsung Electronic
Samsung semiconductor
H55S5162DFR-60M H55S5162DFR-75M H55S5162DFR-A3M 512MBit MOBILE SDR SDRAMs based on 8M x 4Bank x16I/O
 Hynix Semiconductor
HY5S7B6LF-H HY5S7B6LF-S HY5S7B6LFP-H HY5S7B6LFP-S 512MBit MOBILE SDR SDRAMs based on 8M x 4Bank x16I/O
 Hynix Semiconductor
UPD4516821AG5-A12-7JF UPD4516421AG5-A12-7JF UPD451 x8 SDRAM
x4 SDRAM x4内存
x16 SDRAM x16内存
 NEC, Corp.
Infineon Technologies AG
 
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K4N51163QC-ZC36 bit K4N51163QC-ZC36 amp K4N51163QC-ZC36 reference K4N51163QC-ZC36 quad op amp K4N51163QC-ZC36 Phase
 

 

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