| PART |
Description |
Maker |
| GS8642Z18B-250I GS8642Z18GB-200 |
72Mb Pipelined and Flow Through Synchronous NBT SRAM 4M X 18 ZBT SRAM, 6.5 ns, PBGA119
72Mb Pipelined and Flow Through Synchronous NBT SRAM 4M X 18 ZBT SRAM, 7.5 ns, PBGA119
|
GSI Technology, Inc.
|
| GS8640ZV18T-167I GS8640ZV36GT-167I |
72Mb Pipelined and Flow Through Synchronous NBT SRAM 4M X 18 ZBT SRAM, 8 ns, PQFP100
72Mb Pipelined and Flow Through Synchronous NBT SRAM 2M X 36 ZBT SRAM, 8 ns, PQFP100
|
GSI Technology, Inc.
|
| GS8640Z18T-167I GS8640Z18T-200 GS8640Z18T-200I |
72Mb Pipelined and Flow Through Synchronous NBT SRAM 4M X 18 ZBT SRAM, 8 ns, PQFP100
72Mb Pipelined and Flow Through Synchronous NBT SRAM 4M X 18 ZBT SRAM, 7.5 ns, PQFP100
|
GSI Technology, Inc.
|
| K7K3236T2C K7K3218T2C |
1Mx36 & 2Mx18 DDRII CIO b2 SRAM
|
Samsung semiconductor
|
| R1Q5A3618B R1Q5A3618BBG-33R R1Q5A3618BBG-40R R1Q5A |
36-Mbit DDRII SRAM 4-word Burst
|
Renesas Electronics Corporation
|
| K7I323682C K7I321882C |
1Mx36 & 2Mx18 DDRII CIO b2 SRAM
|
Samsung semiconductor
|
| R1QKA3618CB R1QKA3636CB R1QEA3636CB R1QEA3636CBG R |
36-Mbit DDRII SRAM 2-word Burst
|
Renesas Electronics Corporation
|
| GS8662D08E-250 GS8662D08E-200 GS8662D08GE-167I GS8 |
72Mb SigmaQuad-II Burst of 4 SRAM
|
GSI[GSI Technology]
|
| GS8662T08E-300I GS8662T08E-167 GS8662T08GE-167 GS8 |
72Mb SigmaCIO DDR-II Burst of 2 SRAM
|
GSI[GSI Technology]
|
| GS8662R08E-333 GS8662R08E-333I GS8662R08E-300 GS86 |
72Mb SigmaCIO DDR-II Burst of 4 SRAM
|
GSI[GSI Technology]
|
| K7I161882B |
(K7I163682B / K7I161882B) 1Mx18-bit DDRII CIO b2 SRAM
|
Samsung semiconductor
|
| UPD44164364F5-E60-EQ1 UPD44164084 UPD44164084F5-E4 |
18M-BIT DDRII SRAM 4-WORD BURST OPERATION
|
NEC[NEC]
|
