| PART |
Description |
Maker |
| HMC605LP3 HMC605LP3E |
GaAs PHEMT MMIC LOW NOISE AMPLIFIER w/ BYPASS MODE, 2.3 - 2.7 GHz
|
Hittite Microwave Corporation
|
| 373LP3E |
GaAs PHEMT MMIC LOW NOISE AMPLIFIER w/ BYPASS MODE, 700 - 1000 MHz
|
美国讯泰微波有限公司上海代表
|
| FCI-INGAAS-120 FCI-INGAAS-300 FCI-INGAAS-400 FCI-I |
(FCI-INGAAS-55 - FCI-INGAAS-500) High Speed InGaAs Photodiodes
|
Laser Components
|
| ATF-511P8-BLK ATF-511P8-TR2 ATF-511P8-TR1 ATF-511P |
C BAND, Si, N-CHANNEL, RF POWER, HEMFET 2 X 2 MM, 0.75 MM HEIGHT, LPCC-8
High Linearity Enhancement Mode
ATF-511P8 · Single Voltage E-pHEMT Low Noise 41.7 dBm OIP3 in LPCC
|
Agilent Technologies, Inc.
HP[Agilent(Hewlett-Packard)]
Agilent (Hewlett-Packard)
|
| APD-1351-VF APD-1351-VFA APD-1351-VL APD-1351-VLA |
Mini-Size InGaAs Avalanche PHOTODIODE with Single-Mode Pigtail
|
Optoway Technology Inc
|
| MRFG35003M6T1 |
MRFG35003M6T1 3.5 GHz, 3 W, 6 V Power FET GaAs PHEMT
GALLIUM ARSENIDE PHEMT
|
MOTOROLA[Motorola, Inc]
|
| ATF-501P8-BLK ATF-501P8-TR1 ATF-501P8-TR2 ATF501P8 |
ATF-501P8 · Single Voltage E-pHEMT Low Noise 45.5 dBm OIP3 in LPCC
Agilent ATF-501P8 High Linearity Enhancement Mode Pseudomorphic HEMT in 2x2 mm2 LPCC Package
|
Agilent (Hewlett-Packard)
Agilent(Hewlett-Packard)
|
| MGF4951 MGF4951A MGF4952A |
SUPER LOW NOISE InGaAs HEMT
|
Mitsubishi Electric Corporation
|
| MGF4941AL |
SUPER LOW NOISE InGaAs HEMT
|
Mitsubishi Electric Semiconductor
|
| MGF4936AM |
SUPER LOW NOISE InGaAs HEMT
|
Mitsubishi Electric Semiconductor
|
| PD-1500-S PD-1500-T PD-1500-FB PD-1500-SB PD-3500- |
InGaAs PIN PD MODULES InGaAs PIN PHOTODIODE WITH RECEPTACLE 铟镓砷铟镓砷针放电模块PIN光电二极管与插座
|
Optoway Technology Inc.
Optoway Technology, Inc.
|
| HMC669LP3 HMC669LP3E |
GaAs PHEMT MMIC LNA w/ FAILSAFE BYPASS MODE, 1700 - 2200 MHz
|
http://
Hittite Microwave Corporation
|
