PART |
Description |
Maker |
M27C512-45XF6 M27C512 M27C512-10B1 M27C512-10B3 M2 |
512 Kbit (64K x8) UV EPROM and OTP EPROM
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STMICROELECTRONICS[STMicroelectronics]
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SST29EE512-70-4I-EH SST29LE512-70-4I-EH SST29VE512 |
512 Kbit (64K x 8) page-mode EEPROM 512 Kbit (64K x8) Page-Mode EEPROM 64K X 8 EEPROM 3V, 200 ns, PDSO32 512 Kbit (64K x8) Page-Mode EEPROM 64K X 8 EEPROM 5V, 70 ns, PDSO32 512 Kbit (64K x8) Page-Mode EEPROM 64K X 8 FLASH 3V PROM, 150 ns, PQCC32 512 Kbit (64K x8) Page-Mode EEPROM 512千位4K的8)页模式的EEPROM 512 Kbit (64K x8) Page-Mode EEPROM 512千位4K的8)页模式EEPROM 512 Kbit (64K x8) Page-Mode EEPROM 64K X 8 FLASH 5V PROM, 70 ns, PQCC32 512 Kbit (64K x8) Page-Mode EEPROM 64K X 8 FLASH 5V PROM, 70 ns, PDSO32
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SILICON STORAGE TECHNOLOGY INC Silicon Storage Technology, Inc.
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M27C512-10 M27C512-12F1 M27C512-12F1E M27C512-12F1 |
CAP 620PF 200V 1% NP0(C0G) RAD.20 T&R R-MIL-PRF-20 STANDOFF 1-To-4 Address Register/Driver With 3-State Outputs 80-TSSOP -40 to 85 512千位4K的8)紫外线存储器和OTP存储 SERVSWITCH USB COAX CPU CABLES, WITH AUDIO 50FT 512千位64Kb的x8紫外线存储器和OTP存储 512 Kbit (64K x8) UV EPROM and OTP EPROM 512千位4K的8)紫外线存储器和OTP存储 512 Kbit 64Kb x8 UV EPROM and OTP EPROM 512千位64Kb的x8紫外线存储器和OTP存储 SMM310; Package: HG-MMA-4; Acoustic Sensitivity: -42.0 dBV/Pa; Signal to Noise: 59.0 dB(A); V<sub>DD</sub> (min): 1.5 V; V<sub>DD</sub> (max): 3.3 V; Distortion Treshold: 110.0 dBSPL; 512千位64Kb的x8紫外线存储器和OTP存储 CAP 39PF 200V 5% NP0(C0G) AXIAL T&R R-MIL-PRF-20 CAP 33PF 50V 10% NP0(C0G) SMD-1206 TR-7-PL SN-NIBAR MARKED Fuses, 100mA 250V SB 5X15 BULK CAP 3.3PF 100V /-0.25PF NP0(C0G) SMD-1206 TR-7-PL SN-NIBAR CAP 2700PF 50V 5% NP0(C0G) SMD-1206 TR-7-PL SN-NIBAR CAP 3300PF 100V 1% NP0(C0G) SMD-1206 TR-7-PL SN-NIBAR CAP 33PF 100V 10% NP0(C0G) SMD-1206 TR-7-PL SN-NIBAR CAP 2200PF 50V 10% NP0(C0G) SMD-1206 TR-7-PL SN-NIBAR MARKED CAP 220PF 100V 1% NP0(C0G) SMD-1206 TR-7-PL SN-NIBAR CAP 220PF 50V 2% NP0(C0G) SMD-1206 TR-7-PL SN-NIBAR CAP 330PF 100V 5% NP0(C0G) SMD-1206 TR-7-PL SN-NIBAR MARKED CAP 330PF 50V 5% NP0(C0G) SMD-1206 TR-7-PL SN-NIBAR CAP 24PF 50V 5% NP0(C0G) SMD-1206 TR-7-PL SN-NIBAR 20-Bit Buffer/Driver With 3-State Outputs 56-SSOP -40 to 85 CAP 100UF 63V ALUM ELECT, 20% LOW ESR SMD, 10X10.2 CAP 220PF 100V 10% NP0(C0G) SMD-1206 TR-7-PL SN-NIBAR CAP 8200UF 450V ELECT SCREW TERM GLASS TUBE FOR DS80 IRON PKG/4 SERV SWITCH USB COAX CPU CABLES 50 FT SERV SWITCH USB COAX CPU CABLES 35 FT 512 KBIT (64KB X8) UV EPROM AND OTP EPROM 64K X 8 OTPROM, 200 ns, PDIP28 64K X 8 OTPROM, 100 ns, PDSO28 64K X 8 OTPROM, 150 ns, PQCC32 64K X 8 OTPROM, 120 ns, PDIP28 64K X 8 OTPROM, 120 ns, PQCC32 64K X 8 OTPROM, 200 ns, PQCC32
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STMicroelectronics N.V. 意法半导 STMICROELECTRONICS[STMicroelectronics] ST Microelectronics
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C30997-050 C30997-250 |
512 KBIT (64KB X8) UV EPROM and OTP EPROM 光电
|
TE Connectivity, Ltd.
|
M27C516-55N6TR |
512 Kbit 32Kb x16 OTP EPROM
|
ST Microelectronics
|
EN29LV512 |
512 Kbit (64K x 8-bit ) Uniform Sector
|
Eon Silicon Solution
|
SST29LE512-90-4I-PH |
512 Kbit (64K x8) Page-Mode EEPROM 512千位4K的8)页模式的EEPROM
|
Silicon Storage Technology, Inc.
|
PM37LV512-70PC PM37LV512 PM37LV512-70JC PM37LV512- |
512 Kbit (64K X 8) Dual-Voltage Multiple-Cycle-Programmable ROM 512千位4K的8)双电压多周期可编程ROM
|
PMC-Sierra, Inc.
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M27C1024-35C1 M27C1024-90C1 M27C1024-12C6 M27C1024 |
64K X 16 OTPROM, 100 ns, PDSO40 64K X 16 OTPROM, 100 ns, PQCC44 64K X 16 OTPROM, 100 ns, PDIP40 64K X 16 UVPROM, 100 ns, CDIP40 64K X 16 UVPROM, 45 ns, CDIP40 1 MBIT (64KB X16) UV EPROM AND OTP EPROM
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STMICROELECTRONICS ST Microelectronics
|
M24512-WMW6TP M24256-BR M24256-BRDW6G M24256-BRDW6 |
512 Kbit and 256 Kbit Serial I2C bus EEPROM with three Chip Enable lines
|
STMICROELECTRONICS[STMicroelectronics]
|
M87C257-20C1TR M87C257-20C3TR M87C257-20C6TR M87C2 |
Address Latched 256 Kbit (32Kb x8) UV EPROM and OTP EPROM
|
STMicroelectronics
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