| PART |
Description |
Maker |
| M366S6453CTS M366S6453CTS-L1H_C1H M366S6453CTS-L1L |
PC133/PC100 Unbuffered DIMM
|
Samsung semiconductor
|
| HYM71V16655AT8 |
PC100 SDRAM Unbuffered DIMM
|
Hynix Semiconductor
|
| M366S1723DTS-L7C M366S1723DTS M366S1723DTS-C M366S |
PC133/PC100 Unbuffered DIMM PC133/PC100无缓冲DIMM
16Mx64 SDRAM DIMM based on 16Mx8, 4Banks, 4K Refresh, 3.3V Synchronous DRAMs with SPD Data sheet
|
Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
Samsung Electronic
|
| W9832AASA 9832AASA |
32MB (4M x 64) SDRAM SO-DIMM MODULE(32MB (4M x 64)小型双列直插同步动态RAM模块)
From old datasheet system
|
Winbond Electronics Corp
|
| GMM2649233EFTG |
8Mx64 Bits PC100/PC133 Sdram Unbuffered Dimm Based on 8Mx8 Sdram With Lvttl
|
Hynix Semiconductor
|
| HYMD232646B8J-D4 HYMD232646B8J-D43 HYMD232646B8J-J |
DDR SDRAM - Unbuffered DIMM 256MB
32M X 64 DDR DRAM MODULE, 0.7 ns, DMA184 DIMM-184
Unbuffered DDR SDRAM DIMM
|
Hynix Semiconductor, Inc.
|
| M366S3253BTS-C75 M366S3253BTS |
32MB x 64 SDRAM DIMM based on 32MB x 8, 4Banks, 8KB Refresh, 3.3V Synchronous DRAMs with SPD Data Sheet
32Mx64 SDRAM DIMM based on 32Mx8, 4Banks, 8K Refresh, 3.3V Synchronous DRAMs with SPD
|
Samsung Electronic
SAMSUNG[Samsung semiconductor]
|
| HYMD132645BL8J-J HYMD116G725BL8-M HYMD116G725BL8-L |
32Mx64|2.5V|J|x16|DDR SDRAM - Unbuffered DIMM 256MB
Unbuffered DDR SDRAM DIMM
SDRAM|DDR|16MX72|CMOS|DIMM|184PIN|PLASTIC
|
Hynix Semiconductor
|
| V436416S04V |
3.3 VOLT 16M x 64 HIGH PERFORMANCE PC100 UNBUFFERED SDRAM MODULE
|
Mosel Vitelic Corp
MOSEL[Mosel Vitelic, Corp]
Mosel Vitelic Corp
|
| HYMD264646B8-H HYMD264646B8-K HYMD264646B8-L HYMD2 |
Unbuffered DDR SDRAM DIMM
64Mx64|2.5V|M/K/H/L|x16|DDR SDRAM - Unbuffered DIMM 512MB
|
Hynix Semiconductor
|
