| PART |
Description |
Maker |
| HYMD132645BL8-H HYMD132645BL8-M HYMD132645BL8-L HY |
SDRAM|DDR|32MX64|CMOS|DIMM|184PIN|PLASTIC 内存|复员| 32MX64 |的CMOS |内存| 184PIN |塑料
32Mx64|2.5V|M/K/H/L|x16|DDR SDRAM - Unbuffered DIMM 256MB 32Mx64 | 2.5V的| /升| x16 | DDR SDRAM内存- 256MB的无缓冲DIMM
|
SUSUMU Co., Ltd.
|
| M366S3253CTU |
32Mx64 SDRAM DIMM based on 32Mx8, 4Banks, 8K Refresh, 3.3V Synchronous DRAMs with SPD Data Sheet
|
Samsung Electronic
|
| NT256D64S88A2GM NT256D64S88A2GM-7K NT256D64S88A2GM |
256Mb: 32Mx64 unbuffered DDR SO-DIMM module based 32Mx8 SDRAM
200pin One Bank Unbuffered DDR SO-DIMM 200pin一个银行缓冲的DDR SO - DIMM插槽
|
NANYA
ETC
Electronic Theatre Controls, Inc.
|
| HYM72V32636BLT8-K HYM72V32636BT8-K HYM72V32636BLT8 |
SDRAM - Unbuffered DIMM 256MB
SDRAM|32MX64|CMOS|DIMM|168PIN|PLASTIC
|
Hynix Semiconductor
|
| M366S0424DTS M374S1723CTS M366S1723ATS M366S1723BT |
4M x 64 SDRAM DIMM based on 8M x 8, 4Banks, 4K Refresh, 3.3V Synchronous DRAMs with SPD Serial Presence Detect
16M x 72 SDRAM DIMM ECC based on 16M x 8, 4Banks, 4K Refresh, 3.3V Synchronous DRAMs with SPD Serial Presence Detect
16M x 64 SDRAM DIMM based on 16M x 8, 4Banks, 4K Refresh, 3.3V Synchronous DRAMs with SPD Serial Presence Detect
|
Samsung Electronic
|
| M374S1623DT0 |
16M x 72 SDRAM DIMM with ECC based on 8M x 8, 4Banks, 4K Refresh, 3.3V Synchronous DRAMs with SPD Data sheet
|
Samsung Electronic
|
| M366S0824DT0 M366S1623DT0 |
8M x 64 SDRAM DIMM based on 4M x 16, 4Banks, 4K Refresh, 3.3V Synchronous DRAMs with SPD Serial Presence Detect
16M x 64 SDRAM DIMM based on 8M x 8, 4Banks, 4K Refresh, 3.3V Synchronous DRAMs with SPD Serial Presence Detect
|
Samsung Electronic
|
| M374S6453CTS-L7C M347S6453CTS-C1H M347S6453CTS-C1L |
64Mx72 SDRAM DIMM with ECC based on 32Mx8, 4Banks, 8K Refresh, 3.3V Synchronous DRAMs with SPD Data sheet
M374S6453CTS PC133/PC100 Unbuffered SDRAM DIMM
M374S6453CTS PC133/PC100 Unbuffered SDRAM DIMM
|
SAMSUNG SEMICONDUCTOR CO. LTD.
Samsung Electronic
SAMSUNG[Samsung semiconductor]
|
| M368L3313DTL-CB0 M368L3313DTL-CB3 M368L3313DTL-CA2 |
256MB DDR SDRAM MODULE (32Mx64(16Mx64*2 bank) based on 16Mx8 DDR SDRAM)
|
Samsung semiconductor
|
| NT256D64S8HA0G-8B NT256D64S8HA0G NT256D64S8HA0G-75 |
256Mb: 32Mx64 unbuffered DDR SDRAM module based 16Mx8 SDRAM
184pin Two Bank Unbuffered DDR SDRAM MODULE 184pin两个银行无缓冲DDR SDRAM内存模块
|
NANYA
List of Unclassifed Manufacturers
ETC[ETC]
Electronic Theatre Controls, Inc.
|
| HYS64V16302GU-75-D HYS64V16302GU-75-C2 HYS64V16302 |
3.3 V 16M 64-Bit, 128MByte SDRAM Module 168-pin Unbuffered DIMM Modules 3.3,6004位，128MByte SDRAM内存模块168针脚无缓冲DIMM模块
3.3 V 16M 64-Bit, 128MByte SDRAM Module 168-pin Unbuffered DIMM Modules 3.3,60064位，128MByte SDRAM内存模块168针脚无缓DIMM模块
|
Infineon Technologies AG
|
| M390S6450CTU |
64Mx72 SDRAM DIMM with PLL & Register based on 64Mx4, 4Banks, 8K Ref., 3.3V Synchronous DRAMs with SPD. Low Profile Registered DIMM. Data Sheet
|
Samsung Electronic
|
