| PART |
Description |
Maker |
| M58BF008ZA M58BF008 M58BF008B100D6T M58BF008B100ZA |
8 Mbit 256Kb x32 / Burst Flash Memory
8 Mbit 256Kb x32, Burst Flash Memory
|
ST Microelectronics
STMICROELECTRONICS[STMicroelectronics]
|
| M58BW16F M58BW16FB4T3 M58BW16FB4T3F M58BW16FB4T3T |
16 or 32 Mbit (x32, Boot Block, Burst) 3.3V supply Flash memories
|
STMICROELECTRONICS[STMicroelectronics]
|
| M58BW032DB45T3T M58BW032BB55T3T M58BW032BB60T3T M5 |
32 Mbit (1Mb x32, Boot Block, Burst) 3.3V Supply Flash Memory
|
ST Microelectronics
|
| M58LV064B150ZA6T M58LV064A M58LV064A150N1T M58LV06 |
64 Mbit 4Mb x16 or 2Mb x32, Uniform Block, Burst 3V Supply Flash Memories
|
STMICROELECTRONICS[STMicroelectronics]
|
| M58BW032DT60ZA3T M58BW032DT60T3T -M58BW032BB55ZA3T |
32 Mbit (1Mb x32, Boot Block, Burst) 3.3V Supply Flash Memory 32兆位兆X32号，引导块，突发.3V电源快闪记忆
|
STMicroelectronics N.V.
|
| M58LV064A150ZA1T M58LV064A150ZA6T M58LV064B150N1T |
64 Mbit 4Mb x16 or 2Mb x32, Uniform Block, Burst 3V Supply Flash Memories 64兆位4Mb的x16或功能的2Mb X32号，统一座，突发3V电源闪存
|
STMicroelectronics N.V.
|
| M36P0R9060E0 M36P0R9060E0ZACE M36P0R9060E0ZACF |
512 Mbit (x16, Multiple Bank, Multi-Level, Burst) Flash memory 64 Mbit (Burst) PSRAM, 1.8V supply, Multi-Chip Package
|
STMicroelectronics
|
| M58LW064 M58LW064BT M58LW064A150T6T M58LW064AZA M5 |
64 Mbit x16 and x16/x32, Block Erase Low Voltage Flash Memories 64兆位x16和x16/x32，块擦除低压闪存
|
意法半导
STMicroelectronics N.V.
|
| M36P0R9070E0 |
512 Mbit Flash memory 128 Mbit (Burst) PSRAM
|
Numonyx
|
| M36P0R8070E0 |
256 Mbit Flash memory 128 Mbit (burst) PSRAM
|
Numonyx
|
| M36W0R6050B1 M36W0R6050B1ZAQE M36W0R6050B1ZAQF M36 |
64 Mbit (4 Mb 】16, Multiple Bank, Burst) Flash memory and 32 Mbit (2 Mb 】16) PSRAM, multi-chip package
|
Numonyx B.V
|
| M36P0R9060E0 |
512 Mbit Flash memory 64 Mbit (Burst) PSRAM
|
Numonyx
|
