| PART |
Description |
Maker |
| MP4203 |
TOSHIBA POWER MOS FET MODULE SILICON P CHANNEL MOS TYPE
|
Toshiba Semiconductor
|
| M68732HA 68732HA |
SILICON MOS FET POWER AMPLIFIER, 440-490MHz, 7W, FM PORTABLE 硅场效应晶体管功率放大器40 - 490MHz的，7瓦，调频便携
From old datasheet system
Silicon MOS FET Power Amplifier, 440-490MHz, 7W FM PORTABLE
RF POWER MODULE SILICON MOS FET POWER AMPLIFIER, 440-490 MHz 7W FM PORTABLE
|
Mitsubishi Electric, Corp.
MITSUBISHI[Mitsubishi Electric Semiconductor]
Mitsubishi Electric Corporation
|
| MP4411 |
Power MOS FET Module Silicon N Channel MOS Type (L2-pi-MOSV 4 in 1) High Power, High Speed Switching Applications For Printer Head Pin Driver and Pulse Motor Driver For Solenoid Driver
|
TOSHIBA
|
| M68731HM 68731HM |
RF POWER MODULE SILICON MOS FET POWER AMPLIFIER, 145-174MHz, 6.5W, FM PORTABLE RADIO
From old datasheet system
SILICON MOS FET POWER AMPLIFIER 145-174MHz 6.5W FM PORTABLE RADIO
SILICON MOS FET POWER AMPLIFIER / 145-174MHz / 6.5W / FM PORTABLE RADIO
145 MHz - 174 MHz RF/MICROWAVE NARROW BAND HIGH POWER AMPLIFIER
|
Mitsubishi Electric Corporation
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| PM50502C |
SILICON N-CHANNEL POWER MOS FET MODULE HIGH SPEED POWER SWITCHING
|
Hitachi Semiconductor
|
| M67799SHA |
RF POWER MODULE SILICON MOS FET POWER AMPLIFIER, 490-512MHz, 7W, FM PORTABLE RADIO
|
Mitsubishi Electric Corporation
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| M68732SH 68732SH |
RF POWER MODULE SILICON MOS FET POWER AMPLIFIER, 490-512MHz, 7W, FM PORTABLE RADIO
From old datasheet system
|
Mitsubishi Electric Corporation
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| M68739M 68739M |
From old datasheet system
RF POWER MODULE SILICON MOS FET POWER AMPLIFIER, 155-168MHz, 7W, FM PORTABLE RADIO
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
Mitsubishi Electric Corporation
|
| M68710EL |
RF POWER MODULE SILICON MOS FET POWER AMPLIFIER, 290-330MHz, 2W, FM PORTABLE RADIO
SILICON MOS FET POWER AMPLIFIER 290-330MHz 2W FM PORTABLE RADIO
|
Mitsubishi Electric Corporation
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| 2SK1611 |
V(dss): 800V; silicon N-channel powe F-MOS FET. For high-speed switching, for high frequency power amplification
Silicon N-Channel Power F-MOS FET
|
Panasonic Semiconductor
http://
|
