| PART |
Description |
Maker |
| KMM5364005CSW KMM5364005CSWG |
4M X 36 DRAM SIMM USING 4MX16 & QUAD CAS 4MX4, 4K REFRESH, 5V
4MB X 36 DRAM Simm Using 4MB X 16 & Quad Cas 4MB X 4
|
SAMSUNG[Samsung semiconductor]
|
| GS842Z18AB-180 GS842Z36AB-180 GS842Z36AB-150I GS84 |
180MHz 8ns 256K x 18 4Mb pipelined and flow through synchronous NBT SRAM
180MHz 8ns 256K x 36 4Mb pipelined and flow through synchronous NBT SRAM
150MHz 10ns 256K x 36 4Mb pipelined and flow through synchronous NBT SRAM
166MHz 8.5ns 256K x 36 4Mb pipelined and flow through synchronous NBT SRAM
150MHz 10ns 256K x 18 4Mb pipelined and flow through synchronous NBT SRAM
|
GSI Technology
|
| M27C320 6185 M27C320-80N1 M27C320-100M1 M27C320-10 |
From old datasheet system
32 Mbit (4Mb x8 or 2Mb x16) OTP EPROM
32 Mbit 4Mb x8 or 2Mb x16 OTP EPROM 32兆位4Mb的x8或检察官办公室的2Mb x16存储
|
ST Microelectronics
STMICROELECTRONICS[STMicroelectronics]
意法半导
STMicroelectronics N.V.
|
| MCM44256B MCM44D256B MCM44A256B MCM44B256B MCM44C2 |
4MB R4000 Secondary Cache Fast Static RAM Module Set
OSC 5V SMT 7X5 CMOS PROGRM
256K X 36 CACHE TAG SRAM MODULE, 17 ns, SMA80
4MB R4000 secondary cache fast static RAM module set
|
MOTOROLA[Motorola, Inc]
Motorola, Inc.
MOTOROLA INC
|
| GS74104ATP-10 GS74104AJ-10I GS74104AGJ-10 GS74104A |
1M x 4 4Mb Asynchronous SRAM 1M X 4 STANDARD SRAM, 10 ns, PDSO44
1M x 4 4Mb Asynchronous SRAM 1M X 4 STANDARD SRAM, 10 ns, PDSO32
1M x 4 4Mb Asynchronous SRAM 1M X 4 STANDARD SRAM, 12 ns, PDSO32
1M x 4 4Mb Asynchronous SRAM 1M X 4 STANDARD SRAM, 12 ns, PDSO44
1M x 4 4Mb Asynchronous SRAM 1M X 4 STANDARD SRAM, 8 ns, PDSO44
|
GSI Technology, Inc.
|
| RMLV0408E RMLV0408EGSA-5S2 RMLV0414EGSB-5S2 RMLV04 |
4Mb Advanced LPSRAM
|
Renesas Electronics Corporation
|
| GS74108J GS74108TP |
512K x 8 4Mb Asynchronous SRAM
|
GSI Technology
|
| DSM2150F5V |
4Mb + 256Kb Flash (3V), PLD, up to 40 I/O (2)
|
st
|
| IS61NVF12836A-6.5B2 IS61NVF12836A-6.5B2I IS61NLF25 |
128K x 36 and 256K x 18 4Mb, FLOW THROUGH (NO WAIT) STATE BUS SRAM 128K X 36 ZBT SRAM, 6.5 ns, PBGA119
128K x 36 and 256K x 18 4Mb, FLOW THROUGH (NO WAIT) STATE BUS SRAM 256K X 18 ZBT SRAM, 7.5 ns, PBGA165
128K x 36 and 256K x 18 4Mb, FLOW THROUGH (NO WAIT) STATE BUS SRAM 256K X 18 ZBT SRAM, 6.5 ns, PQFP100
128K x 36 and 256K x 18 4Mb, FLOW THROUGH (NO WAIT) STATE BUS SRAM 128K X 36 ZBT SRAM, 7.5 ns, PBGA119
128K x 36 and 256K x 18 4Mb, FLOW THROUGH (NO WAIT) STATE BUS SRAM 256K X 18 ZBT SRAM, 7.5 ns, PQFP100
128K x 36 and 256K x 18 4Mb, FLOW THROUGH (NO WAIT) STATE BUS SRAM 128K X 36 ZBT SRAM, 7.5 ns, PQFP100
|
Integrated Silicon Solution, Inc.
|
| A0A18 |
Super Low Power Slow SRAM - 4Mb
|
Hynix Semiconductor
|
