| PART |
Description |
Maker |
| MCM72CF64SG66 MCM72CF32 MCM72CF32SG66 |
256KB and 512KB BurstRAM Secondary Cache Module for Pentium
|
MOTOROLA[Motorola, Inc]
|
| M29W400DB |
4 MBIT (512KB X8 OR 256KB X16, BOOT BLOCK) 3V SUPPLY FLASH MEMORY
|
STMicroelectronics
|
| MPC2104P MPC2104PDG66 MPC2105PDG66 |
256KB/512KB BurstRAM Secondary Cache Modules for PowerPC PReP/CHRP Platforms
|
Motorola, Inc
|
| M29F400BT M29F400BB |
4 Mbit 512Kb x8 or 256Kb x16 / Boot Block Single Supply Flash Memory
|
ST Microelectronics
|
| M29F400BB45N1E M29F400BB45N1F M29F400BB45N3E M29F4 |
4 Mbit (512Kb x8 or 256Kb x16, Boot Block) single supply Flash memory
|
STMICROELECTRONICS[STMicroelectronics]
|
| M29W400BB90N6T M29W400BB90M1T M29W400BB55N1T |
4 Mbit 512Kb x8 or 256Kb x16, Boot Block Low Voltage Single Supply Flash Memory
4 Mbit 512Kb x8 or 256Kb x16, Boot Block Low Voltage Single Supply Flash Memory 4兆位512KB的x856Kb的x16插槽，引导块低压单电源闪
|
STMicroelectronics N.V.
|
| M29W400 M29W400B M29W400B-100M1R M29W400B-100M1TR |
4 Mbit 512Kb x8 or 256Kb x16 / Boot Block Low Voltage Single Supply Flash Memory
4 Mbit 512Kb x8 or 256Kb x16, Boot Block Low Voltage Single Supply Flash Memory
|
ST Microelectronics
STMICROELECTRONICS[STMicroelectronics]
|
| M29W400BT 6584 |
4 Mbit (512Kb x8 or 256Kb x16, Boot Block)Low Voltage Single Supply Flash Memory
From old datasheet system
|
STMicro
|
| 4559 M34559G6-XXXFP |
18-Mbit (512K x 36/1M x 18) Pipelined SRAM; Architecture: Standard Sync, Pipeline SCD; Density: 18 Mb; Organization: 512Kb x 36; Vcc (V): 3.1 to 3.6 V
SINGLE-CHIP 4-BIT CMOS MICROCOMPUTER 单芯位微机的CMOS
|
Renesas Electronics Corporation.
Renesas Electronics, Corp.
|
| CY7C1380C-200AC CY7C1380C-200BGC CY7C1380C-167AC C |
Memory : Sync SRAMs
PUSHBUTTON, METAL, FLAT, 22MM 5A; Switch function type:NC/NO Mom; Voltage, contact AC max:250V; Temp, op. max:55(degree C); Temp, op. min:-20(degree C); Diameter, panel cut-out:22.2mm; Length / Height, external:32mm; Dielectric RoHS Compliant: Yes
18-Mb (512K x 36/1M x 18) Pipelined SRAM 1M X 18 CACHE SRAM, 2.8 ns, PBGA165
18-Mb (512K x 36/1M x 18) Pipelined SRAM 1M X 18 CACHE SRAM, 2.6 ns, PBGA165
18-Mb (512K x 36/1M x 18) Pipelined SRAM 512K X 36 CACHE SRAM, 2.8 ns, PBGA165
18-Mb (512K x 36/1M x 18) Pipelined SRAM 512K X 36 CACHE SRAM, 3 ns, PQFP100
18-Mb (512K x 36/1M x 18) Pipelined SRAM 512K X 36 CACHE SRAM, 2.8 ns, PQFP100
18-Mb (512K x 36/1M x 18) Pipelined SRAM 512K X 36 CACHE SRAM, 3.4 ns, PQFP100
|
Cypress Semiconductor Corp.
Cypress Semiconductor, Corp.
|
| IDT71P72804 IDT71P72604 IDT71P72604S167BQ IDT71P72 |
1.8V 1M x 18 QDR II PipeLined SRAM
1.8V 512K x 36 QDR II PipeLined SRAM
Storage, Cases
Tools, Applicator RoHS Compliant: NA
Nickel Cadmium Battery Pack; Voltage Rating:12V RoHS Compliant: NA
SIGN, FIRE EXTINGUISHER, 100X200MM; RoHS Compliant: NA
18Mb Pipelined QDRII SRAM Burst of 2 35.7流水线推QDRII SRAM的爆
18Mb Pipelined QDRII SRAM Burst of 2 2M X 9 QDR SRAM, 0.5 ns, PBGA165
18Mb Pipelined QDRII SRAM Burst of 2 2M X 9 QDR SRAM, 0.45 ns, PBGA165
|
IDT
http://
Integrated Device Technology, Inc.
|
