| PART |
Description |
Maker |
| PSB2196-NV1.4 PSB2196-HV1.4 |
ISAC-P TE (Subscriber Access Controll...
|
Infineon
|
| TPCF8402 TPCF840209 |
Field Effect Transistor Silicon P, N Channel MOS Type (U-MOS IV / U-MOS III)
|
Toshiba Semiconductor
|
| MD3500-14 |
35A MOTOROLA TYPE PRESS-FIT DIODE
|
Won-Top Electronics
|
| 2SK2792 A5800302 |
Transistors > MOS FET > Power MOS FET
From old datasheet system
Switching (600V, 4A)
|
ROHM
|
| STB3NA80 4229 STB3NA80T4 |
Resettable Fuse; Series:1210L; Thermistor Type:PTC; Operating Voltage Max:6VDC; Holding Current:0.35A; Tripping Current:0.7A; External Depth:0.85mm; Length:3.43mm; Initial Resistance Min:0.32ohm; Initial Resistance Max:1.3ohm RoHS Compliant: Yes
N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR
From old datasheet system
|
意法半导
STMICROELECTRONICS[STMicroelectronics]
|
| BD3501 BD3500 BD3502 BD3503 BD3504 BD3505 BD3506 |
35A BOSCH TYPE PRESS-FIT DIODE 35A条博世型压接二极
|
Won-Top Electronics Co., Ltd.
WTE[Won-Top Electronics]
|
| BD3524 BD3520 |
35A AVALANCHE BOSCH TYPE PRESS-FIT DIODE
|
WTE[Won-Top Electronics]
|
| LD3501 LD3506 LD3500 LD3502 LD3503 LD3504 LD3505 |
35A 10mm LUCAS TYPE PRESS-FIT DIODE
|
WTE[Won-Top Electronics]
|
| RJK0856DPB-15 |
80V, 35A, 8.9m?max. Silicon N Channel Power MOS FET Power Switching
|
Renesas Electronics Corporation
|
| TPCS8201 |
Field Effect Transistor Silicon N Channel MOS Type (U-MOS II) Lithium Ion Battery Applications Portable Equipment Applications Notebook PCs
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOS )
|
TOSHIBA[Toshiba Semiconductor]
|
| APT6040 APT6040BN APT6045BN |
POWER MOS IV 600V 18.0A 0.40 Ohm / 600V 17.0A 0.45 Ohm
N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS
|
ADPOW[Advanced Power Technology]
|
