| PART |
Description |
Maker |
| APT6015JVR |
POWER MOS V 600V 35A 0.150 Ohm
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
|
Advanced Power Technology
|
| R6035ENZ1 |
Nch 600V 35A Power MOSFET
|
Rohm
|
| PSB2154-HV1.3 |
SIUC-X (Single Chip ISDN USB Controll...
|
Infineon
|
| TPCP840207 TPCP8402 |
TOSHIBA Field Effect Transistor Silicon P, N Channel MOS Type (U-MOS IV / U-MOS III)
|
Toshiba Semiconductor
|
| TPCP8402 |
TOSHIBA Field Effect Transistor Silicon P, N Channel MOS Type (U-MOS IV / U-MOS III)
|
TOSHIBA[Toshiba Semiconductor]
|
| RJK0655DPB RJK0655DPB-00-J5 RJK0655DPB-15 |
60V, 35A, 6.7m max. Silicon N Channel Power MOS FET Power Switching
60V, 35A, 6.7m?max. Silicon N Channel Power MOS FET Power Switching
|
Renesas Electronics Corporation
|
| BD350006 BD3506 BD3500 BD3501 BD3502 BD3503 BD3504 |
35A BOSCH TYPE PRESS-FIT DIODE
|
WTE[Won-Top Electronics]
|
| STB3NA80 4229 STB3NA80T4 |
Resettable Fuse; Series:1210L; Thermistor Type:PTC; Operating Voltage Max:6VDC; Holding Current:0.35A; Tripping Current:0.7A; External Depth:0.85mm; Length:3.43mm; Initial Resistance Min:0.32ohm; Initial Resistance Max:1.3ohm RoHS Compliant: Yes
N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR
From old datasheet system
|
意法半导
STMICROELECTRONICS[STMicroelectronics]
|
| BD3536 BD3520-14 |
35A AVALANCHE BOSCH TYPE PRESS-FIT DIODE
|
Won-Top Electronics
|
| LD3501 LD3506 LD3500 LD3502 LD3503 LD3504 LD3505 |
35A 10mm LUCAS TYPE PRESS-FIT DIODE
|
WTE[Won-Top Electronics]
|
| DD350 DD356S DD350S DD351 DD351S DD352 DD352S DD35 |
35A GLASS PASSIVATED DISH TYPE PRESS-FIT DIODE
|
WTE[Won-Top Electronics]
|
