| PART |
Description |
Maker |
| MDD172-16N1 MDD172 MDD172-08N1 MDD172-12N1 MDD172- |
High Power Diode Modules 大功率二极管模块
High Power Diode Modules 190 A, 1600 V, SILICON, RECTIFIER DIODE
High Power Diode Modules 190 A, 800 V, SILICON, RECTIFIER DIODE
High Power Diode Modules 190 A, 1800 V, SILICON, RECTIFIER DIODE
Thyristor and Rectifiers Modules
|
IXYS, Corp.
IXYS Corporation
|
| MDD250-16N1 MDD250 MDD250-08N1 MDD250-12N1 MDD250- |
High Power Diode Modules 290 A, 1200 V, SILICON, RECTIFIER DIODE
Thyristor and Rectifiers Modules
|
IXYS, Corp.
IXYS[IXYS Corporation]
|
| RM15TC-40 |
MITSUBISHI DIODE MODULES HIGH VOLTAGE MEDIUM POWER GENERAL USE INSULATED TYPE
|
Mitsubishi Electric Corporation
|
| RM30TC-40 |
MITSUBISHI DIODE MODULES HIGH VOLTAGE MEDIUM POWER GENERAL USE INSULATED TYPE
|
Mitsubishi Electric Corporation
|
| RM20TA-2H RM20TA-24 |
MITSUBISHI DIODE MODULES HIGH VOLTAGE MEDIUM POWER GENERAL USE INSULATED TYPE
|
Mitsubishi Electric Corporation
|
| VBO54-12NO7 VBO54-14NO7 VBO54-16NO7 |
Power Modules/Rectifier Bridge Modules: Single Phase Diode Bridges
|
IXYS
|
| VUO85-16NO7 |
Power Modules/Rectifier Bridge Modules: Three Phase Diode Bridges
|
IXYS
|
| VBE26-06NO7 |
Power Modules/Rectifier Bridge Modules: Single Phase Diode Bridges with Fast Recovery Diodes
|
IXYS
|
| RM10TN-2H |
Rectifier Diode Modules for ASIPM
Three-Phase Diode Bridge Modules
128 x 64 pixel format, LED Backlight available
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
Mitsubishi Electric Corporation
|
