| PART |
Description |
Maker |
| MGFK33V4045 K334045 |
14.0~14.5GHZ BAND 2W INTERNALLY MATCHED GAAS FET
From old datasheet system
14.0-14.5GHz BAND 2W INTERNALLY MATCHED GaAs FET
|
Mitsubishi Electric Corporation
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| MGFC47A7785 |
7.7 - 8.5GHz BAND 50W INTERNALLY MATCHED GaAs FET
|
Mitsubishi Electric Semiconductor
|
| MGFC40V7785B |
7.7 - 8.5GHz BAND 10W INTERNALLY MATCHED GaAs FET
|
Mitsubishi Electric Corporation
|
| MGFS45V273504 MGFS45V2735 |
2.7 - 3.5GHz BAND 30W INTERNALLY MATCHED GaAs FET
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| MGFC40V7785 |
7.7 - 8.5GHz BAND 10W INTERNALLY MATCHED GaAs FET
|
Mitsubishi Electric Corporation
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| MGFC42V7785A |
7.7- 8.5GHz BAND 16W INTERNALLY MATCHED GaAs FET
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| MGFC36V7785A C367785A |
From old datasheet system
7.7 - 8.5GHz BAND 4W INTERNALLY MATCHED GaAs FET
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| MGFC40V7785B C407785B |
From old datasheet system
7.7 - 8.5GHz BAND 10W INTERNALLY MATCHED GaAs FET
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| 55GN01CA 55GN01CA12 ENA1111A |
RF Transistor, 10V, 70mA, fT=5.5GHz, NPN Single CP
UHF Wide-band Low-noise Amplifier Applications
|
ON Semiconductor
Sanyo Semicon Device
|
| 55GN01FA12 ENA1113A 55GN01FA |
RF Transistor, 10V, 70mA, fT=5.5GHz, NPN Single SSFP
UHF Wide-band Low-noise Amplifier Applications
|
ON Semiconductor
Sanyo Semicon Device
|
| PMB2201 |
Mixer DC - 2.5GHz and Vector Modulator 0.8 - 1.5GHz
|
Siemens Semiconductor Group
|
