| PART |
Description |
Maker |
| MH32S72QJA-8 MH32S72QJA-7 |
2415919104-BIT ( 33554432-WORD BY 72-BIT ) Synchronous DYNAMIC RAM
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| MH32S72PHB-10 MH32S72PHB-7 MH32S72PHB-8 |
2415919104-BIT (33554432 - WORD BY 72-BIT)SynchronousDRAM
|
Mitsubishi Electric Corporation
|
| MH32S64APFB-8 |
2147483648-BIT (33554432 - WORD BY 64-BIT)SynchronousDRAM 2147483648位（33554432 -文字4位）SynchronousDRAM
|
Mitsubishi Electric, Corp.
|
| MH32S72DBFA-8 |
2,415,919,104-BIT ( 33,554,432-WORD BY 72-BIT ) Synchronous DYNAMIC RAM 2415919104位（33554432 - Word2位）同步动态随机存储器
|
Mitsubishi Electric, Corp.
|
| M6MGT331S8AKT M6MGB331S8AKT |
33,554,432-BIT (2,097,152 - WORD BY 16-BIT /4,194,304-WORD BY 8-BIT) CMOS FLASH MEMORY & 8,388,608-BIT (524,288-WORD BY 16-BIT /1,048,576-WORD BY 8-BI
|
Renesas Electronics Corporation
|
| MR27V852D |
524,288-Word x 16-Bit or 1,048,576-Word x 8-Bit 8-Word x 16-Bit or 16-Word x 8-Bit Page Mode One Time PROM
From old datasheet system
|
OKI
|
| MR27V852E MR27V852ERA MR27V852EJA |
524,288 Word X 16 - Bit or 1,048,576 - Word X 8 - Bit 8 - Word x 16-Bit or 16 - Word x 8-Bit Page Mode One Time PROM
|
OKI[OKI electronic componets]
|
| M6MGT331S4BKT M6MGB331S4BKT |
33,554,432-BIT (2,097,152 - WORD BY 16-BIT/4,194,304-WORD BY 8-BIT) CMOS 3.3V-ONLY FLASH MEMORY & 4,194,304-BIT (262,144-WORD BY 16-BIT/524,288-WORD B
|
Renesas Electronics Corporation
|
| M2V64S20BTP M2V64S20BTP-10 M2V64S20BTP-10L M2V64S2 |
64M bit Synchronous DRAM
4-BANK x 2097152-WORD x 8-BIT
4-BANK x 1048576-WORD x 16-BIT
4-BANK x 4194304-WORD x 4-BIT
From old datasheet system
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| MR53V1652J |
1,048,576-Word X 16-Bit or 2,097,152-Word X 8-Bit 8Word X 16-Bit or 16Word X 8-Bit/Page Mode MASK ROM
From old datasheet system
|
OKI
|
| UPD23C128000BL UPD23C128000BLGX UPD23C128000BLGX-X |
128M-BIT MASK-PROGRAMMABLE ROM 16M-WORD BY 8-BIT (BYTE MODE) / 8M-WORD BY 16-BIT (WORD MODE)
|
NEC
|
