| PART |
Description |
Maker |
| Q62703-Q1090 SFH483E7800 SFH483 |
GaAlAs-IR-Lumineszenzdiode GaAlAs Infrared Emitter 1 ELEMENT, INFRARED LED, 880 nm
GaAlAs-IR-Lumineszenzdiode GaAlAs Infrared Emitter 发动器，红外Lumineszenzdiode GaAlA红外发射
From old datasheet system
|
SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
|
| OD-880E |
HIGH-POWER GaAlAs IR EMITTERS
|
OptoDiode Corp
|
| OD-850L |
HIGH-POWER GaAlAs IR EMITTERS
|
OptoDiode Corp
|
| OD-24F2 |
HIGH-POWER GaAlAs IR EMITTERS
|
OptoDiode
|
| OD-880 |
HIGH-POWER GaAlAs IR EMITTERS
|
OptoDiode Corp
|
| OD-24X24-C |
HIGH-POWER GaAlAs EMITTER CHIPS
|
OptoDiode Corp
|
| OD-148-C |
HIGH-POWER GaAlAs IR EMITTER CHIPS
|
OptoDiode Corp
|
| OD-50W |
SUPER HIGH-POWER GaAlAs IR EMITTERS
|
OPTO DIODE
|
| OD663-850 |
HIGH-POWER GaAlAs IRLED ILLUMINATOR
|
OptoDiode Corp
|
| MIE-406L3U |
GaAlAs HIGH POWER TO-46 PACKAGE INFRARED EMITTING DIODE
|
UOT[Unity Opto Technology]
|
| TSAL5100 |
High Power Infrared Emitting Diode, 950 nm, GaAlAs/GaAs
|
Vishay Siliconix
|
| TSAL510009 |
High Power Infrared Emitting Diode, 940 nm, GaAlAs/GaAs
|
Vishay Siliconix
|
