PART |
Description |
Maker |
FX5545G402T2 FX5545G402 FX5545G402B1 FX5545G402B5 |
Industry Smallest and Low Profile 5W 1A DC/DC Boost Converter with High Output Density Power
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VISAY[Vishay Siliconix]
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FX5545G305 |
LP5951 Micropower, 150mA Low-Dropout CMOS Voltage Regulator; Package: SOT-23; No of Pins: 5 Industry Smallest and Low Profile 10W 3.0A DC/DC Buck Converter with High Output Power Density
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Vishay Intertechnology,Inc. VISAY[Vishay Siliconix]
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LHUV-0380-0150 LHUV-0380-0200 LHUV-0380-0250 LHUV- |
Superior flux density, efficiency and design freedom ?in the industry’s only micro-package UV LED
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Lumileds Lighting Compa...
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SMB10J6.0 SMB10J6.0A SMB10J6.5 SMB10J6.5A SMB8J8.0 |
High Power Density Surface Mount TRANSZORB㈢ Transient Voltage Suppressors High Power Density Surface Mount TRANSZORB垄莽 Transient Voltage Suppressors High Power Density Surface Mount TRANSZORB庐 Transient Voltage Suppressors High Power Density Surface Mount TRANSZORB? Transient Voltage Suppressors
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Vishay Siliconix http://
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ISPLSI2032VE ISPLSI2032VE-110LB49 ISPLSI2032VE-110 |
225 MHz 3.3V in-system prommable superFAST high density PLD 3.3V In-System Programmable High Density SuperFAST?/a> PLD 3.3V In-System Programmable High Density SuperFAST?/a> PLD 3.3V In-System Programmable High Density SuperFAST⑩ PLD 3.3V In-System Programmable High Density SuperFAST PLD IC,Normally-Open Panel-Mount Solid-State Relay,1-CHANNEL,M:HL048HD4.4 IC,Normally-Open Panel-Mount Solid-State Relay,1-CHANNEL,M:HL048HD4.3 IC,Normally-Closed Panel-Mount Solid-State Relay,1-CHANNEL,M:HL048HD4.4 EE PLD, 13 ns, PQCC44 3.3V In-System Programmable High Density SuperFASTPLD EE PLD, 13 ns, PQFP44 3.3V In-System Programmable High Density SuperFASTPLD EE PLD, 6 ns, PQCC44 3.3V In-System Programmable High Density SuperFASTPLD 3.3在系统可编程高密度PLD的超快⑩ 3.3VIn-SystemProgrammableHighDensitySuperFASTPLD
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LATTICE[Lattice Semiconductor] Lattice Semiconductor Corporation Lattice Semiconductor, Corp.
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ISPLSI1024 ISPLSI1024EA-200LT100 1024EA ISPLSI1024 |
200 MHz in-system prommable high density PLD Shielded Paired Cable; Number of Conductors:8; Conductor Size AWG:28; No. Strands x Strand Size:7 x 36; Jacket Material:Polyethylene; Number of Pairs:4; Features:Alumunium Foil Polyester/Tinned Copper Braid; Impedance:120ohm RoHS Compliant: Yes In-System Programmable High Density PLD 100 MHz in-system prommable high density PLD
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Lattice Semiconductor Corporation LATTICE[Lattice Semiconductor] http://
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WP06R WP06R12D05 WP06R12D12 WP06R12D15 WP06R12S05 |
High Density 5-6 Watt Wide Input Range DC/DC Converter 5-6 WATT HIGH DENSITY, WIDE INPUT RANGE DC/DC CONVERTER 5-6 WATT HIGH DENSITY/ WIDE INPUT RANGE DC/DC CONVERTER RECTIFIER SCHOTTKY SINGLE 2A 40V 50A-Ifsm 0.55Vf 0.5A-IR PowerDI-123 3K/REEL
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CANDD[C&D Technologies]
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W4NRD0X-0000 W4NRD8C-U000 W4NXD8C-0000 W4NXD8C-L00 |
Diameter: 50.8mm; LCW substrates; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition Diameter: 50.8mm; ultra-low mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition Diameter: 50.8mm; standatd mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition Diameter: 50.8mm; low mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition Diameter: 50.8mm; select mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition Diameter: 76.2mm; LCW type; 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition Diameter: 50.8mm; LCW type; 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition Diameter: 50.8mm; lsemi-insulating (prototype); 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
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CREE POWER
|
SD20-XXX |
High Power Density
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Cooper Electronic
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1024-60LH_883 ISPLSI1024-60LH_883 1024 1024-60LH/8 |
60 MHz in-system prommable high density PLD In-System Programmable High Density PLD EE PLD, 25 ns, PQCC68 :4; Features:Alumunium Foil Polyester/Tinned Copper Braid; Impedance:120ohm RoHS Compliant: Yes
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Lattice Semiconductor, Corp. Lattice Semiconductor Corporation LATTICE[Lattice Semiconductor] http://
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ISPLSI2032VL ISPLSI2032VL-110LB49 ISPLSI2032VL-110 |
2.5VIn-SystemProgrammableSuperFASTHighDensityPLD 2.5V In-System Programmable SuperFAST⑩ High Density PLD 2.5V In-System Programmable SuperFAST High Density PLD 2.5V In-System Programmable SuperFASTHigh Density PLD EE PLD, 10 ns, PQFP48 2.5V In-System Programmable SuperFASTHigh Density PLD EE PLD, 10 ns, PQFP44 2.5V In-System Programmable SuperFASTHigh Density PLD EE PLD, 7.5 ns, PQFP44 2.5V In-System Programmable SuperFASTHigh Density PLD EE PLD, 5 ns, PQCC44 2.5V In-System Programmable SuperFASTHigh Density PLD EE PLD, 5 ns, PQFP44
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LATTICE[Lattice Semiconductor] Lattice Semiconductor Corporation Lattice Semiconductor, Corp.
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