| PART |
Description |
Maker |
| MDS1100 |
a high power COMMON BASE bipolar transistor.
|
Microsemi Corporation
|
| TPR175 |
high power COMMON BASE bipolar transistor.
|
GHZTECH[GHz Technology]
|
| TPR1000 |
Transponder/ 1090 MHz, Class C, Common Base, Pulsed; P(out) (W): 1000; P(in) (W): 250; Gain (dB): 6; Vcc (V): 50; Pulse Width (µsec): 10; Duty Cycle (%): 1; Case Style: 55KV-1 L BAND, Si, NPN, RF POWER TRANSISTOR
1000 Watts, 45 Volts, Pulsed Avionics 1090 MHz
high power COMMON BASE bipolar transistor.
|
Microsemi, Corp.
ETC[ETC]
GHZTECH[GHz Technology]
List of Unclassifed Manufacturers
|
| DME500 |
RF Power Transistors: AVIONICS
500 Watts, 50 Volts, Pulsed Avionics 1025 - 1150 MHz high power COMMON BASE bipolar transistor.
From old datasheet system
|
Advanced Power Technology
GHZTECH[GHz Technology]
RFMD[RF Micro Devices]
RF Micro Devices, Inc.
|
| 2021-25 |
25 W, 24 V, 2000-2130 MHz common base transistor
25 Watts, 24 Volts, Class C Microwave 2000 - 2130 MHz
BJT
2000-2400 MHz, Class C, Common Base; fO (MHz): 2100; P(out) (W): 25; P(in) (W): 5; Gain (dB): 7.5; Vcc (V): 24; Case Style: 55AW-1 S BAND, Si, NPN, RF POWER TRANSISTOR
|
GHz Technology
Microsemi, Corp.
|
| 20F001N |
10 Base T Filter with Common Choke
|
ETC
|
| 1415-7 |
7 W, 20 V, 1430-1540 MHz common base transistor
|
GHz Technology
|
| BUL54ASMD |
ADVANCED DISTRIBUTED BASE DESIGN HIGH VOLTAGE HIGH SPEED NPN SILICON POWER TRANSISTOR
|
SemeLAB
SEME-LAB[Seme LAB]
|
| BUL64A |
ADVANCED DISTRIBUTED BASE DESIGN HIGH VOLTAGE HIGH SPEED NPN SILICON POWER TRANSISTOR
|
SemeLAB
SEME-LAB[Seme LAB]
|
| BUL74A |
ADVANCED DISTRIBUTED BASE DESIGN HIGH VOLTAGE HIGH SPEED NPN SILICON POWER TRANSISTOR
|
SemeLAB
|
| BUL55A BUL53A |
ADVANCED DISTRIBUTED BASE DESIGN HIGH VOLTAGE HIGH SPEED NPN SILICON POWER TRANSISTOR
|
SEME-LAB[Seme LAB]
TT electronics Semelab Limited
|
