| PART |
Description |
Maker |
| 28F008S5 28F016S5 |
16-MBIT 5V FlashFile Memory(16MV闪速存储器)
8-MBIT 5 VOLT FlashFile Memory(8MV闪速存储器) 8兆位5伏FlashFile内存00万位5V的闪速存储器
|
Intel Corp.
Intel, Corp.
|
| MX23C3210YC-15 23C3210-10 23C3210-12 23C3210-15 MX |
5 Volt 32-Mbit (4M x 8 / 2M x 16) Mask ROM
|
MCNIX[Macronix International]
|
| 23L1610-12 |
3.3 Volt 16-Mbit (2M x 8 / 1M x 16) Mask ROM
|
Macronix International Co., Ltd.
|
| EN29PL064-70BI EN29PL064-70BIP EN29PL064-70CI EN29 |
64/32 Mbit (4/2 M x 16-Bit) CMOS 3.0 Volt- only,
|
Eon Silicon Solution Inc.
|
| MX23L1611TI-12 23L1611-10 23L1611-12 MX23L1611 MX2 |
3.3 Volt 16-Mbit (2M x 8 / 1M x 16) Mask ROM with Page Mode
|
MCNIX[Macronix International]
|
| AM42DL3244GB25IT AM42DL3234GB25IT AM42DL3224GB25IT |
32 Megabit (4 M x 8-Bit/2 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory and 4 Mbit (256 K x 16-Bit) Static RAM SPECIALTY MEMORY CIRCUIT, PBGA73
32 Megabit (4 M x 8-Bit/2 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory and 4 Mbit (256 K x 16-Bit) Static RAM 32兆位个M × 8 2米x 16位）.0伏的CMOS只，同时作业闪存兆位56亩16位），静态存储器
|
Advanced Micro Devices, Inc.
|
| V58C2128 V58C2128164S V58C2128404S V58C2128804S |
HIGH PERFORMANCE 2.5 VOLT 128 Mbit DDR SDRAM
|
MOSEL[Mosel Vitelic, Corp]
|
| EN29PL032A-70TIP |
32 Mbit (2 M x 16-Bit) CMOS 3.0 Volt- only, Simultaneous-Read/Write Flash Memory
|
Eon Silicon Solution Inc.
|
| AT49LV2048B AT49LV2048B-45TI AT49BV2048B-70TI |
AT49BV/LV2048B [Updated 10/02. 13 Pages] 2M bit. 2.7-Volt (BV)/3-Volt (LV) Read and2.7-Volt (BV)/3-Volt (LV) Byte-Write Flash
EEPROM EEPROM
|
TE Connectivity, Ltd.
|
| PM25LV010-25QC PM25LV010-25SC |
512 Kbit / 1 Mbit 3.0 Volt-only, Serial Flash Memory With 25 MHz SPI Bus Interface
|
PMC-Sierra, Inc
|
| S25FL032P |
32-Mbit CMOS 3.0 Volt Flash Memory with 104-MHz SPI (Serial Peripheral Interface) Multi I/O Bus
|
SPANSION
|
| AM42BDS6408G |
64 Mbit (4 M x 16-Bit) CMOS 1.8 Volt-only, Simultaneous Operation, Burst mode Flash Memory and 8 Mbi
From old datasheet system
|
AMD Inc
|
