PART |
Description |
Maker |
KMM372V3280BK3 |
32M x 72 DRAM DIMM(32M x 72 动RAM模块) 32M × 72配置的DRAM内存2M × 72配置动态内存模块)
|
Samsung Semiconductor Co., Ltd.
|
LH28F320S5H-L |
32M-BIT ( 2Mbit x16 / 4Mbit x8 )Boot Block Flash MEMORY(32M 2Mx16 / 4Mx8 )Boot Block 闪速存储器)
|
Sharp Corporation
|
MC-4532CC726EF-A80 MC-4532CC726EF-A10 MC-4532CC726 |
32M-WORD BY 72-BIT SYNCHRONOUS DYNAMIC RAM MODULE UNBUFFERED TYPE 32M X 72 SYNCHRONOUS DRAM MODULE, 6 ns, DMA168
|
ELPIDA MEMORY INC
|
W25Q32BV W25Q32BVSSAG W25Q32BVDAAP W25Q32BVZPAP W2 |
3V 32M-BIT SERIAL FLASH MEMORY WITH DUAL AND QUAD SPI 32M X 1 SPI BUS SERIAL EEPROM, PDSO16
|
WINBOND ELECTRONICS CORP
|
KM23C32005BG |
32M-Bit (4Mx8 /2Mx16) CMOS Mask ROM(32M(4Mx8 /2Mx16) CMOS掩膜ROM)
|
SAMSUNG SEMICONDUCTOR CO. LTD.
|
MC-4532CD646XF-A10 MC-4532CD646XF-A80 MC-4532CD646 |
32M X 64 SYNCHRONOUS DRAM MODULE, 6 ns, DMA168 SOCKET TYPE, DIMM-168 32M-WORD BY 64-BIT SYNCHRONOUS DYNAMIC RAM MODULE UNBUFFERED TYPE
|
Elpida Memory, Inc.
|
MBM29PDS322BE10PBT MBM29PDS322BE11 MBM29PDS322BE11 |
32M (2M x 16) BIT Page Dual Operation 2M X 16 FLASH 1.8V PROM, 115 ns, PBGA63 32M (2M x 16) BIT Page Dual Operation 32M的(2米16)位页双操作 NEOZED TYPE,400V.10A 2M X 16 FLASH 1.8V PROM, 100 ns, PBGA63 Replaced by TPS2046B : 0.345A, 2.7-5.5V Dual (1In/2Out) Hi-Side MOSFET, Fault Report, Act-Low Enable 8-SOIC -40 to 85
|
Fujitsu Component Limited. Fujitsu, Ltd. FUJITSU LTD
|
UPD23C32340GZ-XXX-MJH UPD23C32380GZ-XXX-MJH UPD23C |
32M-bit (4M-wordx8-bit/2M-wordx16-bit) Mask ROM
|
NEC
|
UPD29F032202ALGZ-B85BY-MJH UPD29F032202ALGZ-B85TY- |
32M-bit(4M-wordx8-bit/2M-wordx16-bit) Flash memory
|
NEC
|
MX23L3214XI-10 MX23L3214TI-90 |
32M-BIT MASK ROM 2M X 16 MASK PROM, 100 ns, PBGA48 32M-BIT MASK ROM 2M X 16 MASK PROM, 90 ns, PDSO48
|
Macronix International Co., Ltd.
|
K3P6C2000B-SC |
32M-Bit (2Mx16 /1Mx32) CMOS MASK ROM 32兆位Mx16 / 1Mx32)的CMOS掩膜ROM 32M-Bit (2Mx16/1Mx32) CMOS MASK ROM Data Sheet
|
Samsung Semiconductor Co., Ltd. SAMSUNG SEMICONDUCTOR CO. LTD. SAMSUNG[Samsung semiconductor] Samsung Electronic
|