| PART |
Description |
Maker |
| MX23L6413XI-90G 23L6413-10 23L6413-12 23L6413-90 M |
64M-BIT FLASH COMPATIBLE MASK ROM
|
MCNIX[Macronix International]
|
| 23L6413-90 23L6413-12 |
64M-BIT FLASH COMPATIBLE MASK ROM
|
Macronix International Co., Ltd.
|
| MX23L6414XI-12G |
64M-BIT MASK ROM 4M X 16 MASK PROM, 120 ns, PBGA64
|
Macronix International Co., Ltd.
|
| MX23L6422 MX23L6422MC-11 MX23L6422MC-12 MX23L6422Y |
3.3 Volt 64M-BIT (4M x 16 / 2M x 32) Mask ROM with Page Mode 2M X 32 MASK PROM, 120 ns, PDSO86
|
Macronix International Co., Ltd.
|
| 23L6414-90 |
64M-BIT MASK ROM
|
Macronix International Co., Ltd.
|
| KM23C64000T |
64M-Bit (8Mx8 /4Mx16) CMOS Mask ROM(64M(8Mx8 /4Mx16) CMOS掩膜ROM)
|
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| MX23L6410A MX23L6410AMC-70G MX23L6410AMC-90G MX23L |
64M-BIT PAGE MODE MASK ROM
|
MCNIX[Macronix International]
|
| MX29LV640BUXBI-90G MX29LV640BUTI-12G MX29LV640BUTC |
64M-BIT [4M x 16] CMOS EQUAL SECTOR FLASH MEMORY 4M X 16 FLASH 2.7V PROM, 90 ns, PBGA63
64M-BIT [4M x 16] CMOS EQUAL SECTOR FLASH MEMORY 4M X 16 FLASH 2.7V PROM, 120 ns, PDSO48
|
Macronix International Co., Ltd.
|
| MX29LV640BBTC-12G MX29LV640BTXBI-12G MX29LV640BTXB |
64M-BIT [8M x 8/4M x 16] SINGLE VOLTAGE 3V ONLY FLASH MEMORY 4M X 16 FLASH 3V PROM, 120 ns, PBGA63
64M-BIT [8M x 8/4M x 16] SINGLE VOLTAGE 3V ONLY FLASH MEMORY 4M X 16 FLASH 3V PROM, 120 ns, PDSO48
64M-BIT [8M x 8/4M x 16] SINGLE VOLTAGE 3V ONLY FLASH MEMORY 4M X 16 FLASH 3V PROM, 90 ns, PBGA63
64M-BIT [8M x 8/4M x 16] SINGLE VOLTAGE 3V ONLY FLASH MEMORY 4M X 16 FLASH 3V PROM, 90 ns, PDSO48
|
Macronix International Co., Ltd.
|
| MX29LV640MBXBI-90G MX29LV640MTXBI-90 MX29LV640MTXB |
64M-BIT [8M x 8/4M x 16] SINGLE VOLTAGE 3V ONLY FLASH MEMORY 4M X 16 FLASH 3V PROM, 90 ns, PBGA63
|
Macronix International Co., Ltd.
|
| W25X16VSSIG W25X32VSSIG W25X64VSSIG W25X16VSFI W25 |
16M-BIT, 32M-BIT, AND 64M-BIT SERIAL FLASH MEMORY WITH 4KB SECTORS AND DUAL OUTPUT SPI
|
Winbond
|
| K9F1G08Q0M-PCB0 K9F1G08Q0M-PIB0 K9F1G08Q0M-YCB0 K9 |
128M x 8 Bit / 64M x 16 Bit NAND Flash Memory
1Gb Gb 1.8V NAND Flash Errata
|
Samsung Electronic
SAMSUNG[Samsung semiconductor]
|
