| PART |
Description |
Maker |
| NAND01G-A NAND01GW3A NAND01GW3A0AN6 |
128 Mbit, 256 Mbit, 512 Mbit, 1 Gbit (x8/x16) 528 Byte/264 Word Page, 1.8V/3V, NAND Flash Memories
|
STMicroelectronics
|
| NAND01G-N NAND01GR3N6 NAND01GR4N5 |
1 Gbit (x8/x16) 2112 Byte Page NAND Flash Memory and 512 Mbit (x16) LPSDRAM, 1.8V, Multi-Chip Package
|
Electronic Theatre Controls, Inc.
|
| E28F004S5-85 E28F004S5-120 28F016S5 28F008S5 E28F0 |
BYTE-WIDE SMART 5 FlashFile MEMORY FAMILY 4/ 8/ AND 16 MBIT
BYTE-WIDE SMART 5 FlashFile MEMORY FAMILY 4 / 8 / AND 16 MBIT
12V/5V Input Buck PWM Controller
Evaluation Kit/Evaluation System for the MAX5946A, MAX5946L
BYTE-WIDE SMART 5 FlashFile MEMORY FAMILY 4, 8, AND 16 MBIT 1M X 8 FLASH 5V PROM, 85 ns, PDSO44
BYTE-WIDE SMART 5 FlashFile MEMORY FAMILY 4, 8, AND 16 MBIT 512K X 8 FLASH 5V PROM, 100 ns, PDSO44
BYTE-WIDE SMART 5 FlashFile MEMORY FAMILY 4, 8, AND 16 MBIT 1M X 8 FLASH 5V PROM, 100 ns, PDSO44
BYTE-WIDE SMART 5 FlashFile MEMORY FAMILY 4, 8, AND 16 MBIT 512K X 8 FLASH 5V PROM, 120 ns, PDSO44
|
Intel Corporation
Intel Corp.
Intel, Corp.
|
| CAT64LC10ZJ CAT64LC10ZP CAT64LC10J-TE7 CAT64LC10J- |
18-Mbit QDR™-II SRAM 4-Word Burst Architecture
18-Mbit DDR-II SRAM 2-Word Burst Architecture
36-Mbit DDR-II SRAM 2-Word Burst Architecture (2.5 Cycle Read Latency)
4-Mbit (256K x 18) Flow-Through Sync SRAM SPI串行EEPROM
SPI Serial EEPROM SPI串行EEPROM
|
Analog Devices, Inc.
|
| P89LPC932BA P89LPC932FDH P89LPC932BDH P89LPC932FHN |
8-bit microcontroller with accelerated two-clock 80C51 core 8 kB Flash with 512-byte data EEPROM and 768-byte RAM
80C51 8-bit microcontroller with two-clock core 8 KB 3 V low-power Flash with 512-byte data EEPROM
|
PHILIPS[Philips Semiconductors]
|
| 39LF020 |
512 Kbit / 1 Mbit / 2 Mbit / 4 Mbit (x8) Multi-Purpose Flash
|
Silicon Storage Technology
|
| LC865508A |
8-Bit Single Chip Microcontroller with On-Chip 8K-Byte ROM and 512-Byte RAM(8位单片微控制器（带片K字节ROM12字节RAM
|
Sanyo Electric Co.,Ltd.
|
| ENA1335 |
CMOS IC FROM 8K byte, RAM 512 byte on-chip 8-bit 1-chip Microcontroller
|
Sanyo Semicon Device
|
| CY7C1316BV18 CY7C1318BV18 CY7C1916BV18 CY7C1320BV1 |
18-Mbit DDR-II SRAM 2-Word Burst Architecture(2字Burst结构,18-Mbit DDR-II SRAM) 18兆位的DDR - II SRAM字突发架构（2字突发结18 -兆位的DDR - II SRAM的）
18-Mbit DDR-II SRAM 2-Word Burst Architecture(2瀛?urst缁??,18-Mbit DDR-II SRAM)
|
Cypress Semiconductor Corp.
Cypress Semiconductor, Corp.
|
| ATMEGA8535 ATMEGA8535L |
8-Kbyte self-programming Flash Program Memory, 544 Byte SRAM, 512 Byte EEPROM, 8-channel 10-bit A/D Converter. Up to 16 MIPS throughput at 16 MHz.
8-Kbyte self-programming Flash Program Memory, 544 Byte SRAM, 512 Byte EEPROM, 8-channel 10-bit A/D Converter. Up to 8 MIPS throughput at 8 MHz. 3 Volt Operation
|
Atmel
|
| ATMEGA8515 ATMEGA8515L |
8-Kbyte self-programming Flash Program Memory, 544 Byte internal up to 64 Kbyte external SRAM, 512 Byte EEPROM. Up to 16 MIPS throughput at 16 Mhz.
8-Kbyte self-programming Flash Program Memory, 544 Byte internal up to 64 Kbyte external SRAM, 512 Byte EEPROM. Up to 8 MIPS throughput at 8 Mhz. 3 Volt Operation
|
Atmel
|
