| PART |
Description |
Maker |
| NE687M33-T3-A NE687M33 NE687M33-A |
NECs NPN SILICON TRANSISTOR
|
CEL[California Eastern Labs]
|
| NESG2107M33-T3-A NESG2107M33 NESG2107M33-A |
NECs NPN SILICON TRANSISTOR
|
CEL[California Eastern Labs]
|
| NE687M13-T3-A |
NECs NPN SILICON TRANSISTOR 邻舍NPN硅晶体管
|
Duracell
California Eastern Laboratories, Inc.
|
| NE68139R-T1 NE68139-T1 NE68133-T1 NE68118-T1 NE681 |
NECs NPN SILICON HIGH FREQUENCY TRANSISTOR
|
NEC[NEC]
|
| NESG2046M33-T3-A NESG2046M33 NESG2046M33-A |
NECs NPN SiGe TRANSISTOR FOR LOW NOISE, HIGH -GAIN AMPLIFICATION 邻舍npn型硅锗晶体管低噪声，高增益放
NECs NPN SiGe TRANSISTOR FOR LOW NOISE / HIGH -GAIN AMPLIFICATION
|
NEC, Corp.
NEC Corp.
NEC[NEC]
|
| NESG2021M16-T3-A |
NECs NPN SiGe HIGH FREQUENCY TRANSISTOR
|
California Micro Devices Corporation
|
| NE46134-T1-AZ |
NECs NPN MEDIUM POWER MICROWAVE TRANSISTOR
|
California Eastern Laboratories
|
| NE5520279A-T1 NE5520279A |
NECS 3.2 V 2 W L&S BAND MEDIUM POWER SILICON LD-MOSFET
NECS 3.2 V / 2 W / L&S BAND MEDIUM POWER SILICON LD-MOSFET
NECS 3.2 V, 2 W, L&S BAND MEDIUM POWER SILICON LD-MOSFET
|
NEC Corp.
NEC[NEC]
|
| NR8500 NR8500FR-BB-AZ NR8500FR-CB-AZ NR8500CP-BC-A |
CAP 1.0PF 25V .10 PF NP0(C0G) SMD-0603 TR-7 PLATED-NI/SN
NECs 050 um InGaAs APD IN COAXIAL PACKAGE FOR 155 Mb/s AND 622 Mb/s APPLICATIONS 邻舍050微米铟镓APD的同轴包55字节/秒和622 Mb / s的应
NECs 050 um InGaAs APD IN COAXIAL PACKAGE FOR 155 Mb/s AND 622 Mb/s APPLICATIONS 邻舍050微米铟镓砷APD的同轴包55字节/秒和622 Mb / s的应
NECs φ50 μm InGaAs APD IN COAXIAL PACKAGE FOR 155 Mb/s AND 622 Mb/s APPLICATIONS
|
California Eastern Laboratories, Inc.
California Eastern Labs
|
| 2SB798 2SB798-T2 2SB798-T1 2SB794L 2SB798DK-AZ 2SB |
1000 mA, 25 V, PNP, Si, SMALL SIGNAL TRANSISTOR MINIMOLD PACKAGE-3
TRANSISTOR | BJT | PNP | 60V V(BR)CEO | 1.5A I(C) | TO-126
PNP SILICON EPITAXIAL TRANSISTOR POWER MINI MOLD
Silicon transistor
|
IRC Advanced Film
NEC[NEC]
|
