PART |
Description |
Maker |
NTE1475 |
Integrated Circuit CMOS, Phase-Locked Loop (PLL) Frequency Synthesizer for CB
|
NTE Electronics, Inc. NTE[NTE Electronics]
|
TC58NYG1S3EBAI5 |
MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 2 GBIT (256M × 8 BIT) CMOS NAND E2PROM
|
Toshiba Semiconductor
|
TC55V11601FT-15 |
16,777,216-WORD BY 1-BIT CMOS STATIC RAM MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS
|
Toshiba Semiconductor
|
NTE1754 |
2.5-V Integrated Reference Circuit 8-SOIC 0 to 70 Integrated Circuit Vertical Deflection Output Circuit
|
NTE Electronics, Inc. NTE[NTE Electronics]
|
TC51WKM616AXBN75 |
TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 4,194,304-WORD BY 16-BIT CMOS PSEUDO STATIC RAM
|
TOSHIBA[Toshiba Semiconductor]
|
TC55NEM216AFTN55 TC55NEM216AFTN70 |
262,144-WORD BY 16-BIT FULL CMOS STATIC RAM TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS
|
TOSHIBA[Toshiba Semiconductor]
|
NTE989 |
Integrated Circuit General Purpose Phase Lock Loop (PLL)
|
NTE[NTE Electronics]
|
NTE7108 |
Integrated Circuit 1.3GHz Phase Locked Loop w/I2C Bus
|
NTE[NTE Electronics]
|
TC58512FT |
TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 马鞍山暂定东芝数字集成电路硅栅CMOS 512-MBIT (64M x 8 BITS) CMOS NAND E2PROM
|
Toshiba, Corp.
|
MWA02011L MWA0204 MWA0270 MWA0211L |
I(cc): 40mA; P(in): -16 dB; V(cc): 6V; monolithic microwave integrated circuit MONOLITHIC MICROWAVE INTEGRATED CIRCUIT 3000 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER (MWA02011L / MWA0204 / MWA0270) MONOLITHIC MICROWAVE INTEGRATED CIRCUIT
|
Motorola Mobility Holdings, Inc. Motorola, Inc.
|
NTE7116 |
Integrated Circuit Phase Lock Loop (PLL) Stereo Decoder (BTSC System)
|
NTE[NTE Electronics]
|