| PART |
Description |
Maker |
| M2732A 2377 M2732A-20F1 M2732A-2F6 M2732A-3F1 M273 |
NMOS 32K (4K x 8) UV EPROM, 250ns
From old datasheet system
NMOS 32K 4K x 8 UV EPROM
NMOS 32K (4K x 8) UV EPROM(NMOS 32K紫外线擦除EPROM)
|
SGS Thomson Microelectronics
STMicroelectronics
意法半导
|
| NTE3880 |
Integrated Circuit NMOS, 8-Bit Microprocessor (MPU), 4MHz
|
NTE[NTE Electronics]
|
| M2732A-20F1 M2732A-20F6 M2732A-25F1 M2732A-2F1 M27 |
NMOS 32K 4K x 8 UV EPROM NMOS2KK的8紫外线存储器
|
意法半导
STMicroelectronics N.V.
|
| NTE6507 |
Integrated Circuit NMOS, 8 Bit Microprocessor (MPU) w/On-Chip Clock OSC
|
NTE[NTE Electronics]
|
| 27256 |
256K (32k x 8) Bit NMOS UV Erasable PROM
|
General Semiconductor
|
| UPD43257BGU-70L-A UPD43257BGU-70LL-A UPD43257BGU-8 |
MOS INTEGRATED CIRCUIT 256K-BIT CMOS STATIC RAM 32K-WORD BY 8-BIT
|
NEC
|
| MWA02011L MWA0204 MWA0270 MWA0211L |
I(cc): 40mA; P(in): -16 dB; V(cc): 6V; monolithic microwave integrated circuit
MONOLITHIC MICROWAVE INTEGRATED CIRCUIT 3000 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER
(MWA02011L / MWA0204 / MWA0270) MONOLITHIC MICROWAVE INTEGRATED CIRCUIT
|
Motorola Mobility Holdings, Inc.
Motorola, Inc.
|
| FDZ3N513ZT |
Integrated NMOS and Schottky Diode
|
Fairchild Semiconductor
|
| KA22293 KA22293Q KA2293 |
LINEAR INTEGRATED CIRCUIT
MONOLITHIC INTEGRATED CIRCUIT FOR MUSIC CENTER
|
SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
|
| NTE15023 |
Integrated Circuit dbx TV Noise Reduction Integrated Circuit
|
NTE Electronics
|
| KA2605 |
Monolithic Integrated Circuit
LINEAR INTEGRATED CIRCUIT
|
Samsung semiconductor
|
