| PART |
Description |
Maker |
| NX5323EH |
1 310 nm FOR FTTH PON APPLICATION InGaAsP MQW-FP LASER DIODE
|
NEC
|
| NX5311 |
1310 nm InGaAsP MQW FP LASER DIODE IN CAN PACKAGE FOR 1.25 Gb/s AND FTTH PON APPLICATIONS
|
California Eastern Laboratories
|
| NX5313 |
1310 nm InGaAsP MQW FP LASER DIODE IN CAN PACKAGE FOR FTTH PON APPLICATIONS
|
California Eastern Laboratories
|
| NX5315 NX5315EH-AZ NX5315EK-AZ |
NECs 1310 nm InGaAsP MQW FP LASER DIODE IN CAN PACKAGE FOR FTTH PON APPLICATIONS 邻舍1310纳米InGaAsP多量子阱FP激光二极管能为光纤到户无源光网络应用工具包
|
California Eastern Laboratories, Inc.
|
| NX5521 NX5521EH |
1 550 nm FOR FTTH InGaAsP MQW-FP LASER DIODE
|
California Eastern Labs
|
| NX5504EK-AZ NX5504EH-AZ NX5504 |
NECs 1550 nm InGaAsP MQW-FP LASER DIODE IN CAN PACKAGE FOR FTTH APPLICATION
|
CEL[California Eastern Labs]
|
| NX5310 NX5310EH-AZ NX5310EK-AZ |
NECs 1310 nm InGaAsP MQW FP LASER DIODE IN CAN PACKAGE FOR 155 Mb/s, 622 Mb/s, 1.25 Gb/S AND FTTH APPLICATIONS
|
California Eastern Laboratories
|
| NX5310EK-AZ NX5310EH-AZ NX5310 |
NECs 1310 nm InGaAsP MQW FP LASER DIODE IN CAN PACKAGE FOR 155 Mb/s, 622 Mb/s, 1.25 Gb/S AND FTTH APPLICATIONS
|
CEL[California Eastern Labs]
|
| DS1865T DS186509 DS1865TTR |
PON Triplexer Control and Monitoring Circuit
|
http://
Maxim Integrated Products
Maxim Integrated Produc...
|
| FTM-9412P-F20 |
2x5 SFF GE-PON ONU Transceiver
|
Fiberxon
|
| VSC7716 |
1.25 Gbps Burst Mode Transimpedance Amplifier for GE-PON (EPON) Systems
|
Vitesse Semiconductor Corporation
|
| NX6240GP |
1 270 nm AlGaInAs MQW-DFB LASER DIODE FOR 10 Gb/s E-PON ONU APPLICATION
|
California Eastern Labs
|
