| PART |
Description |
Maker |
| P11_416 2XP11_200 2XP11_260 P11 2XP11/260 P11/416 |
For capsule devices
|
SEMIKRON[Semikron International]
|
| 2XP17/130 |
For capsule devices
|
Semikron International
|
| TRR1A05F00D TRR2AXXX TRR1A05D00D TRR1A05D50D TRR1A |
Miniature, cost-efective switching solution,,state of the art capsule designs
Miniature, cost-efective switching solution,,state of the art capsule designs 微型，成本一效果交换解决方案，最先进的国家胶囊设
PCB Relays
|
List of Unclassifed Man...
Electronic Theatre Controls, Inc.
TTI
ETC[ETC]
List of Unclassifed Manufacturers
List of Unclassifed Manufac...
|
| SHXXC760 |
Capsule Type Rectifier Diode
|
Hind Rectifiers Limited.
|
| N1263XHXX-XX |
4500-5200 Phase Control Thyristor - Capsule Type
|
Westcode Semiconductor
|
| EPC1064 EPC1064V EPC1441 EPC1213 |
Configuration Devices for ACEX, APEX, FLEX & Mercury Devices
|
Altera Corporation
|
| EPC1 |
Configuration Devices for ACEX, APEX, FLEX & Mercury Devices
|
Altera Corporation
|
| LVR016K-2 LVR100S LVRL100 LVRL100S LVRL200S LVR005 |
PolySwitch Resettable Devices Line-Voltage-Rated Devices
|
Tyco Electronics
http://
|
| W4NRD0X-0000 W4NRD8C-U000 W4NXD8C-0000 W4NXD8C-L00 |
Diameter: 50.8mm; LCW substrates; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; ultra-low mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; standatd mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; low mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; select mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 76.2mm; LCW type; 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; LCW type; 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; lsemi-insulating (prototype); 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
|
CREE POWER
|
| LR4-380XF LR4-600XF VTP210SL19.2_5.8 MINISMDE190F- |
PolySwitch Resettable Devices Strap Battery Devices
|
Tyco Electronics
|
| MICROSMD175F |
PolySwitch?PTC Devices
PolySwitch垄莽PTC Devices
|
Tyco Electronics
|
|
