| PART |
Description |
Maker |
| BAT721 1PS76SB21 1PS76SB21-15-15 BAT721C BAT721S B |
Planar Schottky barrier diodes with an integrated guard ring for stress protection. Encapsulated in small Surface-Mounted Device (SMD) plastic packages.
Schottky barrier diodes in small packages
|
NXP Semiconductors
|
| PDB-C168 |
Plastic Photodiode Packages with Leads
|
Advanced Photonix, Inc.
|
| PDB-C157 |
Plastic Photodiode Packages with Leads
|
Advanced Photonix, Inc.
|
| PDB-C156 |
Plastic Photodiode Packages with Leads
|
Advanced Photonix, Inc.
|
| MQFP PQFP |
Metric Plastic Quad Flatpack Packages
|
Intersil Corporation
|
| Z5.067A |
Plastic Packages for Integrated Circuits 集成电路塑料封装
From old datasheet system
|
Intersil, Corp.
INTERSIL[Intersil Corporation]
|
| LP28007 |
Internal Integrate P-MOSFETs
|
Lowpower Semiconductor ...
|
| PDTA114EU.115 |
PNP Resistor-Equipped Transistor (RET) family in small Surface-Mounted Device (SMD) plastic packages.
|
NXP Semiconductors
|
| BAS16W BAS16T BAS516 BAS316 BAS16VY BAS316.115 BAS |
High-speed switching diodes, encapsulated in small Surface-Mounted Device (SMD) plastic packages
High-speed switching diodes, encapsulated in small Surface-Mounted Device (SMD) plastic packages
|
NXP Semiconductors N.V.
|
| DG3409DB DG3015DB DG3408DB |
Device Orientation-MICRO FOOT Packages
Device OrientationMICRO FOOT Packages
Device OrientationMICRO FOOT Packages
|
VISAY[Vishay Siliconix]
Vishay Intertechnology,Inc.
|
| BLF7G27LS-150P BLF7G27L-150P |
150 W LDMOS power transistor for base station applications at frequencies from 2500 MHz to 2700 MHz.
Power LDMOS transistor BLF7G27LS-150P<SOT539B (SOT539B)|<<http://www.nxp.com/packages/SOT539B.html<1<Always Pb-free,;BLF7G27LS-150P<SOT539B (SOT539B)|<<http://www.nxp.com/packages/SOT539B.html<1<Always Pb-free,;
Power LDMOS transistor BLF7G27L-150P<SOT539A (SOT539A)|<<http://www.nxp.com/packages/SOT539A.html<1<Always Pb-free,;BLF7G27L-150P<SOT539A (SOT539A)|<<http://www.nxp.com/packages/SOT539A.html<1<Always Pb-free,;
|
NXP Semiconductors N.V.
|
| BLF7G21L-160P BLF7G21LS-160P |
160 W LDMOS power transistor for base station applications at frequencies from 1800 MHz to 2050 MHz
Power LDMOS transistor BLF7G21L-160P<SOT1121A (CDFM4)|<<http://www.nxp.com/packages/SOT1121A.html<1<Always Pb-free,;BLF7G21L-160P<SOT1121A (CDFM4)|<<http://www.nxp.com/packages/SOT1121A.html<1<Always Pb-free,;
Power LDMOS transistor BLF7G21LS-160P<SOT1121B (CDFM4)|<<http://www.nxp.com/packages/SOT1121B.html<1<Always Pb-free,;BLF7G21LS-160P<SOT1121B (CDFM4)|<<http://www.nxp.com/packages/SOT1121B.html<1<Always Pb-free,;
|
NXP Semiconductors N.V.
|
