| PART |
Description |
Maker |
| 2MI50F050 |
TRANSISTOR,MOSFET POWER MODULE,INDEPENDENT,500V V(BR)DSS,50A I(D)
|
fuji
|
| MJ10016 MJ12002 |
From old datasheet system
RANSISTOR,BJT,DARLINGTON,NPN,500V V(BR)CEO,50A I(C),TO-204AE
|
Advanced Semiconductor, Inc.
Advanced Semiconductor Inc
|
| FRS300BA50 |
DIODE MODULE FRD
|
List of Unclassifed Manufacturers
ETC[ETC]
|
| 2SC3991L |
TRANSISTOR | BJT | NPN | 500V V(BR)CEO | 50A I(C) | TO-247VAR 晶体管|晶体管|叩| 500V五（巴西）总裁| 50A条一（c）|47VAR
|
Honeywell International, Inc.
|
| PC100F6 |
FRD MODULE 100A/600V/trr:110nsec
|
Nihon Inter Electronics Corporation
|
| PD100F12 |
FRD MODULE - 100A/1200V/trr:250nsec
|
Nihon Inter Electronics Corporation
|
| PD100F6 |
FRD MODULE - 100A/600V/trr:110nsec
|
NIEC[Nihon Inter Electronics Corporation]
|
| APT50M85JVFR |
POWER MOS V 500V 50A 0.085 Ohm
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
|
Advanced Power Technology
|
| PBMB50B12 |
IGBT MODULE H-Bridge 50A 1200V
|
NIEC[Nihon Inter Electronics Corporation]
|
