| PART |
Description |
Maker |
| PMGD290XN |
Dual N-channel mTrenchMOS extremely low level FET
|
NXP Semiconductors
|
| PMGD370XN |
Dual N-channel mTrenchMOS extremely low level FET
|
NXP Semiconductors
|
| PMGD290XN PMGD290XN115 GD290XN115 |
Dual N-channel mTrenchMOS extremely low level FET
From old datasheet system
Dual N-channel uTrenchmos (tm) extremely low level FET 860 mA, 20 V, 2 CHANNEL, N-CHANNEL, Si, SMALL SIGNAL, MOSFET
|
PHILIPS[Philips Semiconductors]
NXP Semiconductors N.V.
|
| PMWD15UN |
Dual N-channel mTrenchMOS ultra low level FET
|
NXP Semiconductors
PHILIPS[Philips Semiconductors]
|
| STY16NA90 6004 |
N - CHANNEL 900V - 0.5 ohm - 16A - Max247 EXTREMELY LOW GATE CHARGE POWER MOSFET
From old datasheet system
N - CHANNEL 900V - 0.5 - 16A - Max247 EXTREMELY LOW GATE CHARGE POWER MOSFET
|
STMICROELECTRONICS[STMicroelectronics]
|
| PMK30EP |
P-channel TrenchMOS extremely low level FET
|
NXP Semiconductors
|
| GFC260 |
N Channel Power MOSFET with extremely low RDS(ON)
|
Gunter Seniconductor GmbH.
|
| GFC034 |
N Channel Power MOSFET with extremely low RDS(on)
|
Gunter Seniconductor GmbH.
|
| PMR290XN |
N-channel uTrenchMOS extremely low level FET
|
Philips Semiconductors
|
| PMN50XP |
From old datasheet system
P-channel TrenchMOS extremely low level FET
|
PHILIPS[Philips Semiconductors]
|
| PMWD22XN |
Dual N-channel uTrenchMOS extremely low level FET
|
NXP Semiconductors
PHILIPS[Philips Semiconductors]
|
| TC54 TC54VC6802EMB713 TC54VC4901ECB713 TC54VN2601E |
The TC54 Series are CMOS voltage detectors, suited especially for battery-powered applications because of their extremely low 1uA operating current and small surface-mount packaging. Each part is laser trimmed to the desired threshold volt
1-CHANNEL POWER SUPPLY SUPPORT CKT, PSSO3
1-CHANNEL POWER SUPPLY SUPPORT CKT, PDSO3
1-CHANNEL POWER SUPPLY SUPPORT CKT, PBCY3
|
Microchip
|
