PART |
Description |
Maker |
BBY51-07 |
Silicon Tuning Diode (High Q hyperabrupt dual tuning diode Designed for low tuning voltage operation
|
SIEMENS[Siemens Semiconductor Group]
|
Q62702-B916 BBY58-02W BBY5802W |
From old datasheet system Silicon Tuning Diode (Excellent linearity High Q hyperabrupt tuning diode Low series inductance)
|
Siemens Group SIEMENS[Siemens Semiconductor Group] SIEMENS AG
|
BBY52-03W BBY5203W Q62702-B664 |
Utilibox, Plastic Boxes, Style A, ABS Plastic, box is 4.60 inch height x 4.60 inch width x 2.37 inch depth, Black Textured Finish Silicon Tuning Diode (High Q hyperabrupt dual tuning diode Designed for low tuning voltage operation) From old datasheet system
|
SIEMENS A G SIEMENS AG SIEMENS[Siemens Semiconductor Group]
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BBY58-02L BBY58-02V BBY58-05W BBY58-06W BBY58-07L4 |
Silicon Tuning Diodes 硅调谐二极管 SHOWCASE CABINET 硅调谐二极管 Varactordiodes - Silicon high Q hyperabrupt tuning diode in ultra small SC79 package
|
INFINEON[Infineon Technologies AG]
|
BBY66 BBY66-05W BBY66-02V BBY66-05 |
Silicon Tuning Diodes 硅调谐二极管 Varactordiodes - Silicon high Q hyperabrupt tuning diode for VCO applications Varactordiodes - Silicon high Q hyperabrupt tuning diode for VCO applications
|
INFINEON[Infineon Technologies AG]
|
MMVL2101NBSP MMVL2101T1 MMVL2101 MMVL2101T1-D |
Silicon Tuning Diode Silicon Tuning Diode 6.8 pF, 30 V, SILICON, VARIABLE CAPACITANCE DIODE
|
ONSEMI[ON Semiconductor]
|
MMVL809T1 MMVL809T1G |
UHF BAND, 5.3 pF, 20 V, SILICON, VARIABLE CAPACITANCE DIODE PLASTIC, CASE 477-02, 2 PIN Silicon Tuning Diode
|
ONSEMI[ON Semiconductor]
|
MMVL3102T1 MMVL3102T1_06 MMVL3102T1G MMVL3102T106 |
Silicon Tuning Diode VHF BAND, 22 pF, 30 V, SILICON, VARIABLE CAPACITANCE DIODE PLASTIC, CASE 477-02, 2 PIN
|
ONSEMI[ON Semiconductor]
|
MMVL409T1G MMVL409T106 MMVL409T1 |
Silicon Tuning Diode(调谐二极 VHF BAND, 29 pF, 20 V, SILICON, VARIABLE CAPACITANCE DIODE
|
ONSEMI[ON Semiconductor]
|
KDV1484E |
VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR DIODE AUDIO SIGNAL TUNING
|
KEC(Korea Electronics)
|