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Q62702-F1611 - NPN Silicon RF Transistor for low noi... NPN Silicon RF Transistor (For low-noise amplifiers up to 2GHz at collector currents from 0.5 mA to 20 mA.) Isolation- UL94V-0 Package Material- Power Sharing on Output- Efficiency to 84%

Q62702-F1611_1299040.PDF Datasheet

 
Part No. Q62702-F1611 BFP81
Description NPN Silicon RF Transistor for low noi...
NPN Silicon RF Transistor (For low-noise amplifiers up to 2GHz at collector currents from 0.5 mA to 20 mA.)
Isolation- UL94V-0 Package Material- Power Sharing on Output- Efficiency to 84%

File Size 60.09K  /  7 Page  

Maker

Infineon
SIEMENS[Siemens Semiconductor Group]
SIEMENS AG



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 Full text search : NPN Silicon RF Transistor for low noi... NPN Silicon RF Transistor (For low-noise amplifiers up to 2GHz at collector currents from 0.5 mA to 20 mA.) Isolation- UL94V-0 Package Material- Power Sharing on Output- Efficiency to 84%
 Product Description search : NPN Silicon RF Transistor for low noi... NPN Silicon RF Transistor (For low-noise amplifiers up to 2GHz at collector currents from 0.5 mA to 20 mA.) Isolation- UL94V-0 Package Material- Power Sharing on Output- Efficiency to 84%


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