PART |
Description |
Maker |
HYM72V8030GS-60 HYM72V8030GS-50 HYM72V8020GS-60 HY |
8M x 72 Bit ECC FPM DRAM Module buffered 8M x 72-Bit Dynamic RAM Module (ECC - Module) 8M x 72-Bit Dynamic RAM Module 8M X 72 FAST PAGE DRAM MODULE, 60 ns, DMA168 Tools, Hand Crimp; Leaded Process Compatible:No; Peak Reflow Compatible (260 C):No
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SIEMENS[Siemens Semiconductor Group] Infineon SIEMENS AG SIEMENS A G
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HYM72V8010GS-60 HYM72V8010GS-50 HYM72V8000GS-60 HY |
8M x 72 Bit ECC FPM DRAM Module buffered 8M x 72-Bit Dynamic RAM Module (ECC - Module) 8M x 72-Bit Dynamic RAM Module 8米72位动态随机存储器模块 8M x 72-Bit Dynamic RAM Module 8M X 72 FAST PAGE DRAM MODULE, 60 ns, DMA168 Connector; Leaded Process Compatible:Yes; Peak Reflow Compatible (260 C):Yes 8M X 72 FAST PAGE DRAM MODULE, 50 ns, DMA168
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SIEMENS[Siemens Semiconductor Group] Infineon SIEMENS AG
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MT4LC1M16C3TG-6S MT4LC1M16C3DJ-6S |
FPM DRAM 快速页面模式的DRAM
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Micron Technology, Inc.
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IC41SV4105 IC41SV4105-50J IC41SV4105-50JG IC41SV41 |
DYNAMIC RAM, FPM DRAM From old datasheet system 1Mx4 bit Dynamic RAM with Fast Page Mode
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ICSI[Integrated Circuit Solution Inc]
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HYB314405BJL-70 HYB314405BJL-60 HYB314405BJL-50 HY |
1M x 4 Bit EDO DRAM 3.3 V 50 ns 1M x 4 Bit EDO DRAM 3.3 V 60 ns -1M x 4-Bit Dynamic RAM 1M x 4 Bit EDO DRAM 3.3 V 70 ns 1M x 4-Bit Dynamic RAM (Hyper Page Mode (EDO) version) From old datasheet system
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Infineon SIEMENS[Siemens Semiconductor Group]
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GM71C17800C GM71C17800C-5 GM71C17800C-7 GM71C17800 |
x8 Fast Page Mode DRAM 2M X 8 FAST PAGE DRAM, 60 ns, PDSO28 x8 Fast Page Mode DRAM 2M X 8 FAST PAGE DRAM, 50 ns, PDSO28 2,097,152 WORDS x 8 BIT CMOS DYNAMIC RAM 2M X 8 FAST PAGE DRAM, 50 ns, PDSO28 x8 Fast Page Mode DRAM 2M X 8 FAST PAGE DRAM, 70 ns, PDSO28 2Mx8|5V|2K|5/6|FP/EDO DRAM - 16M IC LOGIC 1G125 SINGLE BUS BUFFER GATE WITH 3-STATE OUTPUTS -40 85C SOT-23-5 3000/REEL 2/097/152 WORDS x 8 BIT CMOS DYNAMIC RAM
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Hynix Semiconductor, Inc. Hynix Semiconductor Inc.
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IC41C44054 IC41C44052 IC41LV44052 IC41LV44054 IC41 |
Circular Connector; MIL SPEC:MIL-C-26482, Series I, Solder; Body Material:Aluminum; Series:PT06; No. of Contacts:8; Connector Shell Size:12; Connecting Termination:Solder; Circular Shell Style:Straight Plug; Body Style:Straight 4Mx4 bit Dynamic RAM with Fast Page Mode 4Mx4位动态RAM的快速页面模 DYNAMIC RAM, FPM DRAM
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Integrated Circuit Solu... ICSI[Integrated Circuit Solution Inc]
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HYM364025GS-60 HYM364025GS-50 HYM364025S-60 HYM364 |
4M x 36-Bit EDO - DRAM Module 4米36位EDO公司-记忆体模 4M x 36-Bit EDO - DRAM Module 4M X 36 EDO DRAM MODULE, 60 ns, SMA72 4M x 36-Bit EDO - DRAM Module 4M X 36 EDO DRAM MODULE, 50 ns, SMA72 4M x 36 Bit EDO DRAM Module with Parity
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INFINEON TECHNOLOGIES AG SIEMENS AG SIEMENS[Siemens Semiconductor Group]
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HYM321005GS-60 HYM321005GS-50 HYM321005S-60 HYM321 |
From old datasheet system 1M x 32-Bit Dynamic RAM Module (Hyper Page Mode - EDO Version) 1M x 32 Bit DRAM Module 1M x 32 Bit EDO DRAM Module
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SIEMENS AG SIEMENS[Siemens Semiconductor Group] Infineon
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GM71C18163BT-8 GM71C18163BJ-6 GM71C18163BJ-8 GM71C |
1,048,576 words x 16 bit DRAM, 80ns, low power 1,048,576 words x 16 bit DRAM, 70ns, low power 1,048,576 words x 16 bit DRAM, 60ns, low power x16 EDO Page Mode DRAM x16 EDO公司页面模式的DRAM
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LG Semiconductor
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Q67100-Q1135 Q67100-Q1136 Q67100-Q1143 Q67100-Q112 |
3.3V 4M x 4-Bit EDO-Dynamic RAM 3.3 4米4位江户动态随机存储器 High-Speed Fully-Differential Amplifiers 8-SOIC -40 to 85 4M X 4 EDO DRAM, 70 ns, PDSO24 3.3V 4M x 4-Bit EDO-Dynamic RAM 4M X 4 EDO DRAM, 50 ns, PDSO24 3.3V 4M x 4-Bit EDO-Dynamic RAM 4M X 4 EDO DRAM, 70 ns, PDSO24
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http:// SIEMENS A G SIEMENS AG
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