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QCA150BA60 - TRANSISTOR MODULE

QCA150BA60_1299795.PDF Datasheet


Part No.	QCA150BA60
Description	TRANSISTOR MODULE
File Size	450.56K / 2 Page
Maker	http:// SANREX[SanRex Corporation]
Homepage
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IXGE75N100Z IXGE50N90Z IXTE9N65X4U IXGE50N50Z	TRANSISTOR \| IGBT POWER MODULE \| INDEPENDENT \| 1KV V(BR)CES \| 75A I(C) TRANSISTOR \| IGBT POWER MODULE \| INDEPENDENT \| 900V V(BR)CES \| 50A I(C) TRANSISTOR \| MOSFET POWER MODULE \| INDEPENDENT \| 650V V(BR)DSS \| 9A I(D) 晶体管\| MOSFET功率模块\|独立\|650V五（巴西）直\| 9A条（丁） TRANSISTOR \| IGBT POWER MODULE \| INDEPENDENT \| 500V V(BR)CES \| 50A I(C) 晶体管\| IGBT功率模块\|独立\| 500V五（巴西）国际消费电子展\| 50A条一（c	IXYS, Corp.
1DI300M-050	TRANSISTOR \| BJT POWER MODULE \| DARLINGTON \| 450V V(BR)CEO \| 300A I(C) Power Transistor Module	Fuji Electric
OM6414SP3 OM6415SP3 OM6413SP3 OM6416SP3	TRANSISTOR \| MOSFET POWER MODULE \| 3-PH BRIDGE \| 200V V(BR)DSS \| 4A I(D) 晶体管\| MOSFET功率模块\| 3 - PH值大桥\| 200伏五（巴西）直\| 4A条（丁） TRANSISTOR \| MOSFET POWER MODULE \| 3-PH BRIDGE \| 400V V(BR)DSS \| 2.5A I(D) 晶体管\| MOSFET功率模块\| 3 - PH值大桥\| 400V五（巴西）直\| 2.5AI（四 TRANSISTOR \| MOSFET POWER MODULE \| 3-PH BRIDGE \| 100V V(BR)DSS \| 6A I(D) 晶体管\| MOSFET功率模块\| 3 - PH值大桥\| 100V的五（巴西）直\| 6A条（丁） TRANSISTOR \| MOSFET POWER MODULE \| 3-PH BRIDGE \| 500V V(BR)DSS \| 2A I(D) 晶体管\| MOSFET功率模块\| 3 - PH值大桥\| 500V五（巴西）直\|甲（丁）	Samwha Electronics International Rectifier, Corp.
BUT30V03 BUT32V03 WM872104 BUT30V_03 BUT30V	NPN TRANSISTOR POWER MODULE Internet Audio DAC with Integrated Headphone Driver NPN TRANSISTOR POWER MODULE	ST Microelectronics STMICROELECTRONICS[STMicroelectronics] WOLFSON
MP4305	Power Transistor Module Silicon PNP Epitaxial Type (Darlington power transistor 4 in 1) High Power Switching Applications. Hammer Drive, Pulse Motor Drive and Inductive Load Switching. TOSHIBA Power Transistor Module Silicon PNP Epitaxial Type (Darlington power transistor 4 in 1)	TOSHIBA[Toshiba Semiconductor] Toshiba Corporation
CPW235P CPW256P	TRANSISTOR \| MOSFET POWER MODULE \| INDEPENDENT \| 250V V(BR)DSS \| 16A I(D) 晶体管\| MOSFET功率模块\|独立\| 250V五（巴西）直\| 16A条（丁） TRANSISTOR \| MOSFET POWER MODULE \| INDEPENDENT \| 500V V(BR)DSS \| 14A I(D)	Atmel, Corp.
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BSM150GAL100D BSM150GB100D	TRANSISTOR \| IGBT POWER MODULE \| INDEPENDENT \| 1KV V(BR)CES \| 150A I(C) 晶体管\| IGBT功率模块\|独立\| 1KV交五（巴西）国际消费电子展\| 150A一（c TRANSISTOR \| IGBT POWER MODULE \| HALF BRIDGE \| 1KV V(BR)CES \| 150A I(C)	Infineon Technologies AG
MP4304	Power Transistor Module Silicon NPN Epitaxial Type (high gain power transistor 4 in 1) High Power Switching Applications. Hammer Drive, Pulse Motor Drive and Inductive Load Switching. TOSHIBA Power Transistor Module Silicon NPN Epitaxial Type (high gain power transistor 4 in 1)	Toshiba Semiconductor Toshiba Corporation
X9315 X9315WSZ-2.7 X9315TM X9315TM-2.7 X9315TMI X9	:SEMITOP 3; Centres, fixing:52.5mm; Current, Ic av:40A; Current, Ic continuous b max:32A; RoHS Compliant: Yes max:2.1V; Case style:SEMITOP 4; Current, Icm pulsed:100A; Temperature, Tj RoHS Compliant: Yes THYRISTOR MODULE, 3 PHASETHYRISTOR MODULE, 3 PHASE; Voltage, Vrrm:1600V; Case style:SEMITOP 3; Current, It rms:68A; Current, Itsm:450A; Voltage, Vgt :SEMITOP-4; Voltage, Vceo:1200V; Voltage, Vce sat max:2.15V; Current, Ic continuous a continuous a max:17A; Voltage, Vce sat max:2.5V; Case style:SEMITOP 3; Current, Icm RoHS Compliant: Yes IGBT MODULE, H BRIDGE 1200VIGBT MODULE, H BRIDGE 1200V; Transistor type:IGBT; Case style:SEMITOP 2; Voltage, Vceo:1200V; Voltage, Vce sat max:3.2V IGBT MODULE, DUAL 600V; Transistor type:IGBT; Case style:SEMITOP 2; Voltage, Vceo:600V; Voltage, Vce sat max:2V; Current, Ic continuous a max:54A IGBT MODULE, CHOPPER 1200VIGBT MODULE, CHOPPER 1200V; Transistor type:IGBT; Case style:SEMITOP 2; Voltage, Vceo:1200V; Voltage, Vce sat max:3V IGBT MODULE 6 PACK 114A 1200V TRENCHIGBT MODULE 6 PACK 114A 1200V TRENCH; Transistor type:3-phase bridge inverter; Case style:SEMITOP-4; Voltage :SEMITOP 2; Centres, fixing:38mm; Current, Ic av:23A; Current, Ic continuous b max:15A; RoHS Compliant: Yes IGBT MODULE, 6 PACK 1200VIGBT MODULE, 6 PACK 1200V; Transistor type:IGBT; Case style:SEMITOP 3; Voltage, Vceo:1200V; Voltage, Vce sat max:2.1V IGBT MODULE, DUAL 1200VIGBT MODULE, DUAL 1200V; Transistor type:IGBT; Case style:SEMITOP 2; Voltage, Vceo:1200V; Voltage, Vce sat max:3V; Current, Ic MOSFET MODULE, 6 PACK 75VMOSFET MODULE, 6 PACK 75V; Transistor type:MOSFET; Transistor polarity:N; Voltage, Vds max:100V; Case style:SEMITOP 2 RECTIFIER SCHOTTKY SINGLE 1A 70V 25A-ifsm 0.8V-vf 0.5mA-ir DO-41 5K/AMMO DIODE SCHOTTKY SINGLE 10V 150mW 0.37V-vf 30mA-IFM 1mA-IF 1uA-IR SOT-523 3K/REEL IGBT MODULE, DUAL 600V; Transistor type:IGBT; Case style:SEMITOP 1; Voltage, Vceo:600V; Voltage, Vce sat max:2V; Current, Ic continuous a max:30A; Current, Icm pulsed:24A; Power, Pd:1400W; Time, rise:35ns; Centres, fixing:28.5mm; Low Noise, Low Power, 32 Taps 10K DIGITAL POTENTIOMETER, INCREMENT/DECREMENT CONTROL INTERFACE, 32 POSITIONS, PDIP8 IGBT MODULE 6 PACK 96A 600V TRENCHIGBT MODULE 6 PACK 96A 600V TRENCH; Transistor type:3-phase bridge inverter; Case style:SEMITOP-4; Current, Ic continuous a max:100A IGBT MODULE, 6 PACK 1200VIGBT MODULE, 6 PACK 1200V; Transistor type:IGBT; Case style:SEMITOP 2; Voltage, Vceo:1200V; Voltage, Vce sat max:2.1V; Current, Ic continuous a max:22A; Current, Icm pulsed:44A; Power, Pd:1600W; Time,	http:// INTERSIL[Intersil Corporation] Intersil, Corp.
CZ300R10KN CC150R10KN CC50R10KN	TRANSISTOR \| BJT POWER MODULE \| DARLINGTON \| 880V V(BR)CEO \| 300A I(C) 晶体管\|晶体管电源模块\|达林顿\| 880V五（巴西）总裁\| 300我（丙） TRANSISTOR \| BJT POWER MODULE \| HALF BRIDGE \| DARLINGTON \| 880V V(BR)CEO \| 150A I(C) 晶体管\|晶体管电源模块\|半桥\|达林顿\| 880V五（巴西）总裁\| 150A一（c TRANSISTOR \| BJT POWER MODULE \| HALF BRIDGE \| DARLINGTON \| 880V V(BR)CEO \| 50A I(C) 晶体管\|晶体管电源模块\|半桥\|达林顿\| 880V五（巴西）总裁\| 50A条一（c	ON Semiconductor RECOM Electronic GmbH
KED24502	Transistor Module	Powerex

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