| PART |
Description |
Maker |
| SPMT6678-01 |
90 AMP 450 VOLTS NPN TRANSISTOR POWER MODULE
|
SSDI[Solid States Devices, Inc]
|
| MTP5P06V |
TMOS POWER FET 5 AMPERES 60 VOLTS RDS(on) = 0.450 OHM
|
MOTOROLA[Motorola, Inc]
|
| CM450DXL-34SA |
Dual IGBT NX-Series Module 450 Amperes/1700 Volts
|
Powerex Power Semiconductors
|
| 0405SC-2200M |
2200Watts, 125 Volts, Class AB 406 to 450 MHz Silicon Carbide SIT
|
Microsemi Corporation
|
| BSV52LT1 BSV52L BSV52LT1-D BSV52LT1/D |
Switching Transistor (NPN Silicon)
Power MOSFET 200 mAmps, 50 Volts N-Channel SOT-23
|
ON Semiconductor
|
| ESM4045AV |
42 A, 450 V, NPN, Si, POWER TRANSISTOR
|
NXP SEMICONDUCTORS
|
| S3902 S3903 S3903-1024Q S3903-512Q |
MOSFET, Switching; VDSS (V): 400; ID (A): 17; Pch : -; RDS (ON) typ. (ohm) @10V: 0.25; RDS (ON) typ. (ohm) @4V[4.5V]: -; RDS (ON) typ. (ohm) @2.5V
MOSFET, Switching; VDSS (V): 450; ID (A): 14; Pch : -; RDS (ON) typ. (ohm) @10V: 0.43; RDS (ON) typ. (ohm) @4V[4.5V]: -; RDS (ON) typ. (ohm) @2.5V
NMOS linear image sensor Current output, high UV sensitivity, excellent linearity, low power consumption
MOSFET, Switching; VDSS (V): 450; ID (A): 22; Pch : -; RDS (ON) typ. (ohm) @10V: 0.25; RDS (ON) typ. (ohm) @4V[4.5V]: -; RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: 1800; toff (µs) typ: -; Package: TO-3P
|
Hamamatsu Photonics
|
| KSC5402DTF |
2 A, 450 V, NPN, Si, POWER TRANSISTOR, TO-252
|
FAIRCHILD SEMICONDUCTOR CORP
|
| BULD1101E-1 |
3 A, 450 V, NPN, Si, POWER TRANSISTOR, TO-251
|
STMICROELECTRONICS
|
| FK10SM-9 |
HIGH-SPEED SWITCHING USE 10 A, 450 V, 0.92 ohm, N-CHANNEL, Si, POWER, MOSFET
|
Powerex, Inc.
POWEREX[Powerex Power Semiconductors]
|
|
