PART |
Description |
Maker |
BUZ100SL-4 |
Quad-Channel SIPMOS Power Transistor SIPMOS ? Power Transistor SIPMOS Power Transistor (Quad-channel Enhancement mode Logic level Avalanche-rated d v/d t rated) 7.4 A, 55 V, 0.023 ohm, 4 CHANNEL, N-CHANNEL, Si, POWER, MOSFET PLASTIC, DSO-28 20 characters x 1 Lines, 5x7 Dot Matric Character and Cursor 7.4 A, 55 V, 0.023 ohm, 4 CHANNEL, N-CHANNEL, Si, POWER, MOSFET
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http:// Siemens Semiconductor Group Infineon Technologies AG SIEMENS AG
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PHD18NQ10T PHP18NQ10T PHB18NQ10T PHB18NQ20T |
N-channel TrenchMOS(tm) transistor N-channel TrenchMOS TM transistor N-channel TrenchMOS transistor 18 A, 100 V, 0.09 ohm, N-CHANNEL, Si, POWER, MOSFET
|
http:// PHILIPS[Philips Semiconductors] NXP Semiconductors N.V.
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PHX9NQ20T PHF9NQ20 PHF9NQ20T PHX9NQ20T127 |
N-channel TrenchMOS(TM) transistor N-channel TrenchMOS transistor 5.2 A, 200 V, 0.4 ohm, N-CHANNEL, Si, POWER, MOSFET PLASTIC, TO-220, FPAK-3
|
Philips NXP Semiconductors N.V.
|
STD2N50 STD2N50-1 STD2N50T4 |
TRANSISTOR | MOSFET | N-CHANNEL | 500V V(BR)DSS | 2A I(D) | TO-252 晶体管| MOSFET的| N沟道| 500V五(巴西)直|甲(丁)|52 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR -通道增强型功率MOS器件 STD2N50-1 I-PAK MOSFET-TRANSIT N-CHANNEL MOSFET
|
STMicroelectronics N.V. 意法半导 ST Microelectronics STMICROELECTRONICS[STMicroelectronics] SGS Thomson Microelectronics
|
2SK160 2SK1600 |
FIELD EFFECT TRANSISTOR SILICON N-CHANNEL MOS TYPE TRANSISTOR,MOSFET,N-CHANNEL,800V V(BR)DSS,3A I(D),TO-220AB
|
Toshiba Semiconductor Toshiba America Electronic Components, Inc.
|
NDT451AN NDT451 NDT451ANJ23Z |
TRANSISTOR | MOSFET | N-CHANNEL | 30V V(BR)DSS | 7.2A I(D) | SOT-223 N-Channel Enhancement Mode Field Effect Transistor
|
Fairchild Semiconductor Corporation FAIRCHILD[Fairchild Semiconductor]
|
MTH8N90 |
TRANSISTOR,MOSFET,N-CHANNEL,900V V(BR)DSS,8A I(D),TO-218AC POWER FIELD EFFECT TRANSISTOR N-CHANNEL ENHANCEMENT-MODE SILICON GATE TMOS
|
MOTOROLA[Motorola, Inc]
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IRFF431 2N6783 IRFF223 |
TRANSISTOR | MOSFET | N-CHANNEL | 450V V(BR)DSS | 2.75A I(D) | TO-205AF TRANSISTOR | MOSFET | N-CHANNEL | 150V V(BR)DSS | 2.2A I(D) | TO-39 TRANSISTOR | MOSFET | N-CHANNEL | 150V V(BR)DSS | 3A I(D) | TO-39 晶体管| MOSFET的| N沟道| 150伏五(巴西)直| 3A条(丁)| TO - 39封装
|
Fairchild Semiconductor, Corp.
|
MPF111 MPF112 MPF110 TP3329 |
TRANSISTOR | JFET | N-CHANNEL | 20V V(BR)DSS | 20MA I(DSS) | TO-92 TRANSISTOR | JFET | N-CHANNEL | 25V V(BR)DSS | 20MA I(DSS) | TO-92 TRANSISTOR | JFET | N-CHANNEL | 20MA I(DSS) | TO-92 TRANSISTOR | JFET | P-CHANNEL | 3MA I(DSS) | TO-92 晶体管|场效应| P通道| 3mA的我(直)|92
|
Electronic Theatre Controls, Inc.
|
STD8N06 3550 STD8N06-1 |
TRANSISTOR | MOSFET | N-CHANNEL | 60V V(BR)DSS | 8A I(D) | TO-251 晶体管| MOSFET的| N沟道| 60V的五(巴西)直| 8A条(丁)|51 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR From old datasheet system
|
ST Microelectronics Electronic Theatre Controls, Inc. STMicroelectronics
|
FX6ASH03 FX6ASH06 FX6VSH03 FX6KMH03 FX6SMH06 FX6UM |
TRANSISTOR | MOSFET | P-CHANNEL | 30V V(BR)DSS | 6A I(D) | TO-252AA TRANSISTOR | MOSFET | P-CHANNEL | 60V V(BR)DSS | 6A I(D) | TO-252AA TRANSISTOR | MOSFET | P-CHANNEL | 30V V(BR)DSS | 6A I(D) | TO-263AB TRANSISTOR | MOSFET | P-CHANNEL | 30V V(BR)DSS | 6A I(D) | SOT-186 TRANSISTOR | MOSFET | P-CHANNEL | 60V V(BR)DSS | 6A I(D) | TO-247VAR TRANSISTOR | MOSFET | P-CHANNEL | 30V V(BR)DSS | 6A I(D) | TO-220AB TRANSISTOR | MOSFET | P-CHANNEL | 60V V(BR)DSS | 6A I(D) | SOT-186 TRANSISTOR | MOSFET | P-CHANNEL | 60V V(BR)DSS | 6A I(D) | TO-263AB TRANSISTOR | MOSFET | P-CHANNEL | 30V V(BR)DSS | 70A I(D) | TO-263AB TRANSISTOR | MOSFET | P-CHANNEL | 60V V(BR)DSS | 3A I(D) | TO-252AA 晶体管| MOSFET的| P通道| 60V的五(巴西)直| 3A条(丁)|52AA TRANSISTOR | MOSFET | P-CHANNEL | 60V V(BR)DSS | 30A I(D) | TO-263AB 晶体管| MOSFET的| P通道| 60V的五(巴西)直| 30A条(丁)|63AB TRANSISTOR | MOSFET | P-CHANNEL | 60V V(BR)DSS | 3A I(D) | TO-263AB 晶体管| MOSFET的| P通道| 60V的五(巴西)直| 3A条(丁)|63AB TRANSISTOR | MOSFET | P-CHANNEL | 30V V(BR)DSS | 30A I(D) | SOT-186 晶体管| MOSFET的| P通道| 30V的五(巴西)直| 30A条(丁)|的SOT - 186
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Renesas Electronics, Corp. NXP Semiconductors N.V.
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