PART |
Description |
Maker |
SLD-1026Z |
3 Watt Discrete LDMOS Device Plastic Surface Mount Package
|
SIRENZA[SIRENZA MICRODEVICES]
|
2SJ211 2SJ211-T2B 2SJ211-L 2SJ211-T1B |
P-CHANNEL MOS FET FOR SWITCHING Box-shaped pin header, Discrete wire crimping connection, Discrete wire connectors; HRS No: 543-0621-7 00; No. of Positions: 8; Connector Type: Panel
|
NEC[NEC] NEC Corp.
|
SLD2083CZ |
10 Watt high performance LDMOS transistor designed for operation to 2700MHz
|
List of Unclassifed Manufacturers ETC[ETC]
|
NE5531079A-T1 NE5531079A-T1-A NE5531079A-T1A-A |
7.5 V OPERATION SILICON RF POWER LDMOS FET FOR UHF-BAND 10 W TRANSMISSION AMPLIFIERS SILICON POWER MOS FET
|
California Eastern Labs
|
TGF2023-01-15 |
6 Watt Discrete Power GaN on SiC HEMT
|
TriQuint Semiconductor
|
TGF2023-2-05-15 |
25 Watt Discrete Power GaN on SiC HEMT
|
TriQuint Semiconductor
|
TGF2955 |
40 Watt Discrete Power GaN on SiC HEMT
|
TriQuint Semiconductor
|
TGF2954-15 |
27 Watt Discrete Power GaN on SiC HEMT
|
TriQuint Semiconductor
|
TGF2023-20 |
100 Watt Discrete Power GaN on SiC HEMT
|
TriQuint Semiconductor
|
PTFB181702FCV1R0 |
Thermally-Enhanced High Power RF LDMOS FET
|
Infineon Technologies A...
|
PXFC191507FC |
Thermally-Enhanced High Power RF LDMOS FET
|
Infineon Technologies A...
|