| PART |
Description |
Maker |
| ICX659ALA ICX658AKA ICX658ALA ICX659AKA |
New Generation EXview HAD CCD Ultrahigh-Sensitivity Near Infrared Structure
|
Electronic Theatre Controls, Inc.
List of Unclassifed Manufacturers
ETC[ETC]
|
| AS098C100W |
High Power Stacked Infrared Laser Diode Array
|
Roithner LaserTechnik GmbH
|
| AS081Q3000W |
High Power Stacked Infrared Laser Diode Array
|
Roithner LaserTechnik GmbH
|
| AS081Q5000W |
High Power Stacked Infrared Laser Diode Array
|
Roithner LaserTechnik GmbH
|
| AS098C40W |
High Power Stacked Infrared Laser Diode Array
|
Roithner LaserTechnik G...
|
| ICX658ALA ICX659ALA |
(ICX658AxA / ICX659AxA) New Generation EXview HAD CCD Ultrahigh-Sensitivity Near Infrared Structure
|
ETC
|
| ELA-920-22X60-2-6 ELA-920-22X60-12-6 |
Infrared LED - Array
|
Roithner LaserTechnik GmbH
|
| 2SK3072 |
Ultrahigh-Speed Switching Applications 超高速开关应
N-Channel Silicon MOSFET Ultrahigh-Speed Switching Applications
|
Sanyo Electric Co., Ltd.
Sanyo Semicon Device
|
| AD668 AD668JQ AD668S |
12-Bit Ultrahigh Speed Multiplying D/A Converter 12位超高速乘法D / A转换
12-Bit Ultrahigh Speed Multiplying D/A Converter PARALLEL, WORD INPUT LOADING, 0.12 us SETTLING TIME, 12-BIT DAC, CDIP24
|
Analog Devices, Inc.
|
| 2SC5303 |
25 A, 800 V, NPN, Si, POWER TRANSISTOR
Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications
|
Sanyo Semicon Device
|
| LNA2901L |
GaAs Infrared Light Emitting Diode 5 mm, 1 ELEMENT, INFRARED LED, 950 nm
|
Panasonic, Corp.
PANASONIC[Panasonic Semiconductor]
|
