| PART |
Description |
Maker |
| AS081C60W |
High Power Stacked Infrared Laser Diode Array
|
Roithner LaserTechnik GmbH
|
| S098Q300W AS098Q300W |
High Power Stacked Infrared Laser Diode Array
|
Rochester Electronics
|
| AS081Q300W |
High Power Stacked Infrared Laser Diode Array
|
Roithner LaserTechnik GmbH
|
| AS098C40W |
High Power Stacked Infrared Laser Diode Array
|
Roithner LaserTechnik G...
|
| AS081Q1200W |
High Power Stacked Infrared Laser Diode Array
|
Roithner LaserTechnik GmbH
|
| ELA-880-22X60-12-6 ELA-880-22X60-2-6 |
Infrared LED - Array
|
Roithner LaserTechnik GmbH
|
| AMG8852 AMG8851 AMG8831 AMG8832 |
Infrared Array Sensor Grid-EYE
|
Panasonic Semiconductor
|
| MIE-324A4 324A4 |
Infrared Emitting Diodes (IRED)
AlGaAs/GaAs HIGH POWER T-1 PACKAGE INFRARED EMITTING DIODE
|
UOT[Unity Opto Technology]
|
| TLN107A E006145 |
INFRARED LED GaAS INFRARED EMITTER
From old datasheet system
INFRARED LED FOR PHOTO INTERRUTER
|
TOSHIBA[Toshiba Semiconductor]
|
| 2SK3491 2SK3491TP-FA |
Low-Power, Single-/Dual-Level Battery Monitors with Hysteresis and Integrated µP Reset
Ultrahigh-Speed Switching Applications
|
Sanyo Semicon Device
|
| OP168F OP268FB OP268FPS OP268FA OP268FC OP269A OP2 |
Plastic Infrared Emitting Diode 0.76 mm, 1 ELEMENT, INFRARED LED, 890 nm
|
TT electronics OPTEK Technology
OPTEK TECHNOLOGY INC
|
| AA3528AF3C |
2.4 mm, 1 ELEMENT, INFRARED LED, 940 nm
3.5x2.8 mm INFRARED EMITTING DIODE
|
Kingbright Corporation
|
