| PART |
Description |
Maker |
| PF0121 |
MOS FET Power Amplifier Module for GSM Mobile Phone
|
Hitachi Semiconductor
|
| MB3891 MB3891PFV |
Power Management IC for GSM Mobile Phone
|
Fujitsu Media Devices Limited
|
| MF1173V-1 |
FOR GSM MOBILE TELEPHONE, Tx
From old datasheet system
|
Mitsubishi Electric Corporation
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| CGY59 Q68000-A8887 |
GaAs MMIC (Low noise preamplifier for mobile communication PCN DECT GSM in 2.7V to 6V systems)
From old datasheet system
GaAs MMIC (Low noise preamplifier for mobile communication PCN, DECT, GSM in 2.7V to 6V systems)
|
SIEMENS AG
Infineon
SIEMENS[Siemens Semiconductor Group]
|
| PCF5081 PCF5082 |
GSM baseband processors for digital mobile cellular radio
|
NXP Semiconductors
PHILIPS[Philips Semiconductors]
|
| MRF18030A |
MRF18030AR3, MRF18030ASR3 GSM/GSM EDGE 1.8 - 1.88 GHz, 30 W, 26 V Lateral N-Channel RF Power MOSFETs
|
Motorola
|
| AWT6168 |
GSM/GPRS/Polar EDGE Power Amplifier Module with Integrated Power Control
|
ANADIGICS, Inc.
|
| MRF5S9101NBR1 MRF5S9101NR1 |
GSM/GSM EDGE LATERAL N-CHANNEL RF POWER MOSFETs
|
Freescale Semiconductor
|
| RF3160 RF3160PCBA |
DUAL-BAND GSM/DCS POWER AMP MODULE
|
RFMD[RF Micro Devices]
|
| PF01411B |
MOS FET Power Amplifier Module for E-GSM Handy Phone
|
HITACHI[Hitachi Semiconductor]
|
| SKY77365 |
Power Amplifier Module for Quad-Band GSM / GPRS / EDGE
|
Skyworks Solutions Inc.
|
