| PART |
Description |
Maker |
| MTE53N50E MTE53N50E_D ON2535 ON2534 |
From old datasheet system
TMOS POWER FET 53 AMPERES 500 VOLTS RDS(on) = 0.080 OHM 53 A, 500 V, 0.08 ohm, N-CHANNEL, Si, POWER, MOSFET
|
MOTOROLA[Motorola, Inc]
ON Semi
Motorola Mobility Holdings, Inc.
|
| 1N659 1N660 FDLL659 1N661 1N746 1N963 1N3600 FDLL6 |
Ultra fast low capacitance diode. Working inverse voltage 50 V.
High speed high conductance diode. Working inverse voltage 175 V.
General purpose low diode. Working inverse voltage 100V.
500 mW silicon linear diode. Max zener impedance 6.0 Ohm, max zener voltage 7.5 V (Iz 20mA).
500 mW silicon linear diode. Max zener impedance 17.0 Ohm, max zener voltage 5.1 V (Iz 20mA).
500 mW silicon linear diode. Max zener impedance 7.0 Ohm, max zener voltage 6.2 V (Iz 20mA).
500 mW silicon linear diode. Max zener impedance 23.0 Ohm, max zener voltage 3.9 V (Iz 20mA).
500 mW silicon linear diode. Max zener impedance 11.0 Ohm, max zener voltage 5.6 V (Iz 20mA).
500 mW silicon linear diode. Max zener impedance 24.0 Ohm, max zener voltage 3.6 V (Iz 20mA).
500 mW silicon linear diode. Max zener impedance 22.0 Ohm, max zener voltage 4.3 V (Iz 20mA).
500 mW silicon linear diode. Max zener impedance 5.0 Ohm, max zener voltage 6.8 V (Iz 20mA).
500 mW silicon linear diode. Max zener impedance 8.0 Ohm, max zener voltage 8.2 V (Iz 20mA).
500 mW silicon linear diode. Max zener impedance 17.0 Ohm, max zener voltage 10.0 V (Iz 20mA).
General purpose low diode. Working inverse voltage 200V.
General Purpose Diodes
|
Fairchild Semiconductor Corporation
FAIRCHILD[Fairchild Semiconductor]
http://
|
| MTV16N50E MTV16N50E_D ON2670 MTV16N50E-D TV16N50E |
16 A, 500 V, 0.4 ohm, N-CHANNEL, Si, POWER, MOSFET
From old datasheet system
TMOS POWER FET 16 AMPERES 500 VOLTS RDS(on) = 0.40 OHM
TMOS E-FET Power Field Effect Transistor D3PAK for Surface Mount N-Channel Enhancement - Mode Silicon Gate
|
ETC
Motorola, Inc
ON Semiconductor
|
| SFF430Z |
4.5 AMP 500 Volts 1.5 OHM N-Channel POWER MOSFET 4.5 A, 500 V, 1.5 ohm, N-CHANNEL, Si, POWER, MOSFET
|
Solid State Devices, Inc.
|
| STW19NM50N STF19NM50N STP19NM50N |
N-channel 500 V, 0.2 Ohm, 14 A MDmesh(TM) II Power MOSFET in TO-247
N-channel 500 V, 0.2 Ohm, 14 A MDmesh(TM) II Power MOSFET in TO-220FP
|
ST Microelectronics
|
| IRFP9240 FN2294 |
From old datasheet system
12A 200V 0.500 Ohm P-Channel Power MOSFET
12A, 200V, 0.500 Ohm, P-Channel Power MOSFET
|
INTERSIL[Intersil Corporation]
|
| SFF450/61 SFF450-61 |
13 AMP 500 Volts 0.40 OHM N-Channel POWER MOSFET
13 AMP 500 Volts 0.40 OHM N-Channel POWER MOSFET 13 A, 500 V, 0.4 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-61
|
Solid States Devices, Inc.
Solid State Devices, Inc.
|
| 2SK2644-01 |
18 A, 500 V, 0.45 ohm, N-CHANNEL, Si, POWER, MOSFET
|
FUJI ELECTRIC CO LTD
|
| 2SK3200 |
10 A, 500 V, 1.1 ohm, N-CHANNEL, Si, POWER, MOSFET
|
SANKEN ELECTRIC CO LTD
|
|
