| PART |
Description |
Maker |
| MH4V64AWXJ-5 MH4V64AWXJ-6 |
FAST PAGE MODE 268435456 - BIT ( 4194304 - WORD BY 64 - BIT ) DYNAMIC RAM 快速页面模68435456 -位（4194304 - Word64 -位）动态随机存储器
|
Mitsubishi Electric Corporation
Mitsubishi Electric, Corp.
|
| MH4M365CNXJ-5 MH4M365CNXJ-6 MH4M365CNXJ-7 MH4M365C |
HYPER PAGE MODE 150994944-BIT ( 4194304-WORD BY 36-BIT ) DYNAMIC RAM 超页模式150994944位（4194304 - Word6位）动态随机存储器
From old datasheet system
|
Mitsubishi Electric, Corp.
MITSUBISHI[Mitsubishi Electric Semiconductor]
Mitsubishi Electric Corporation
|
| MH8S64DBKG-7L |
536870912-BIT (8388608 - WORD BY 64-BIT)SynchronousDRAM 536870912位（8388608 -文字4位）SynchronousDRAM
|
Mitsubishi Electric, Corp.
|
| MH4S64BKG-10L |
268435456-BIT (4194304 - WORD BY 64-BIT)SynchronousDRAM 268435456位（4194304 -文字4位）SynchronousDRAM
|
Mitsubishi Electric Corporation
Mitsubishi Electric, Corp.
|
| LC338128M LC338128P LC338128PL LC338128M-80 LC3381 |
1 MEG (131072 words x 8 bit) pseudo-SRAM
1MEG (131072 WORDS X 8BITS) PSEUDO-SRAM
|
SANYO[Sanyo Semicon Device]
Sanyo Electric Co.,Ltd.
|
| MK32VT832-10YC |
8388608 Word x 32 Bit Synchronous Dynamic RAM Module (1BANK)(8M字2位同步动态RAM模块)
From old datasheet system
|
OKI SEMICONDUCTOR CO., LTD.
|
| TC5116400J |
4194304 word x 4 Bit Dynamic Ram
|
Toshiba
|
| TC514101AXX |
4194304 Word X 1 Bit Dynamic RAM
|
Toshiba
|
| GM71V18163C GM71V18163C-5 GM71V18163C-6 GM71V18163 |
1M words x 16 bit CMOS dynamic RAM, 3.3V, 60ns
1,048,576 WORDS x 16 BIT CMOS DYNAMIC RAM
|
Hynix Semiconductor
|
| HM5117400BS-6 HM5117400BS-7 HM5117400BS-8 HM511740 |
4194304-WORD X 4-BIT DYNAMIC RANDOM ACCESS MEMORY
|
Hitachi,Ltd.
HITACHI[Hitachi Semiconductor]
|
| GM76C8128CL-55 GM76C8128CLLI-55 GM76C8128CLL-85 GM |
131,072 words x 8 bit CMOS static RAM, 55ns
131,072 words x 8 bit CMOS static RAM, low power, 55ns
131,072 words x 8 bit CMOS static RAM, low power, 85ns
131,072 words x 8 bit CMOS static RAM, 70ns
|
LG Semiconductor
|
