| PART |
Description |
Maker |
| TGF2021-04 |
DC - 12 GHz Discrete power pHEMT
|
TRIQUINT[TriQuint Semiconductor]
|
| TGF2022-06 |
DC - 20 GHz Discrete power pHEMT
|
TriQuint Semiconductor,Inc.
|
| TGF2022-48 |
DC - 20 GHz Discrete power pHEMT
|
TRIQUINT[TriQuint Semiconductor]
|
| VSMP1206 |
Z-Based Bulk Metal Foil Technology Discrete High Precision Surface Mount Chip Resistor High Power - Excellent Long Term Stabilty Z -基大块金属箔技术离散高精度表面贴装芯片电阻，高功率-卓越的长期稳
Resistors, fixed discrete
|
Vishay Intertechnology, Inc.
VISAY[Vishay Siliconix]
|
| RFSP5022 PRFS-P5022-EVL PRFS-P5022-009 PRFS-P5022- |
5.15-5.85 GHz U-NII Power Amplifier 5.15-5.85千兆赫的U - NII功率放大
5.15-5.85 GHz U-NII Power Amplifier 5150 MHz - 5850 MHz RF/MICROWAVE NARROW BAND MEDIUM POWER AMPLIFIER
Single-band power amplifiers
The RFS P5022 power amplifier is a high-performance GaAs HBT IC designed for use in a transmit applications in the 5.15-5.85 GHz ...
|
ANADIGICS, Inc.
ANADIGICS[ANADIGICS, Inc]
ANADIGICS[ANADIGICS Inc]
|
| MJD2955-001 MJD3055T4 |
Power 10A 60V Discrete PNP
Power 10A 60V Discrete NPN
|
ON Semiconductor
|
| 2SJ327 2SJ327-Z 2SJ327-Z-T1 2SJ327-Z-E2 2SJ327-Z-T |
Box-shaped pin header, Discrete wire crimping connection, Discrete wire connectors; HRS No: 543-0620-4 00; No. of Positions: 6; Connector Type: Panel
SWITCHING P-CHANNEL POWER MOS FET INDUSTRIAL USE
P-channel enhancement type
|
NEC Corp.
NEC[NEC]
|
| 7210 8111 7232 8846 6150 7683 7226 7205 8601 7715 |
T-1 subminiature, miniature flanged lamp. 12.0 volts, 0.040 amps.
T-1 subminiature, wire lead lamp. 28.0 volts, 0.024 amps.
T-1 subminiature, wire lead lamp. 5.0 volts, 0.021 amps.
T-1 subminiature, wire lead lamp. 2.5 volts, 0.320 amps.
T-1 subminiature, miniature flanged lamp. 1.5 volts, 0.075 amps.
T-1 subminiature, bi-pin lamp. 5.0 volts, 0.075 amps.
T-1 subminiature, bi-pin lamp. 1.5 volts, 0.075 amps.
T-1 subminiature, wire lead lamp. 1.5 volts, 0.075 amps.
T-1 subminiature, short type lamp. 5.0 volts, 0.075 amps.
T-1 subminiature, wire lead lamp. 5.0 volts, 0.075 amps.
T-1 Subminiature Lamps 的T 1微型灯泡
IC-SM-256K CMOS SRAM
IC,ARINC,429,LINE,RCVR,EXT
Internal power supply connectors (capable of potting), Discrete wire connectors; HRS No: 676-0013-0 00; No. of Positions: 8; Connector Type: Wire
Internal power supply connectors (capable of potting), Discrete wire connectors; HRS No: 676-0027-5 00; No. of Positions: 8; Connector Type: Wire
Internal power supply connectors (capable of potting), Discrete wire connectors; HRS No: 676-0011-5 00; No. of Positions: 6; Connector Type: Wire
to 85; General Description: Housing; Double row; Crimping
Internal power supply connectors (capable of potting), Discrete wire connectors; HRS No: 676-0025-0 00; No. of Positions: 4; Connector Type: Wire
Internal power supply connectors (capable of potting), Discrete wire connectors; HRS No: 676-0008-0 00; No. of Positions: 3; Connector Type: Wire
Internal power supply connectors (capable of potting), Discrete wire connectors; HRS No: 676-0028-8 00; No. of Positions: 10; Connector Type: Wire
Direct mounting on the PCB, Crimping connection, Discrete wire connectors; HRS No: 544-0043-9 00; No. of Positions: 9; Connector Type: Wire; Contact
Internal power supply connectors (capable of potting), Discrete wire connectors; HRS No: 676-0010-2 00; No. of Positions: 5; Connector Type: Wire
Internal power supply connectors (capable of potting), Discrete wire connectors; HRS No: 676-0038-1 00; No. of Positions: 16; Connector Type: Wire
Internal power supply connectors (capable of potting), Discrete wire connectors; HRS No: 676-0009-3 00; No. of Positions: 4; Connector Type: Wire
Internal power supply connectors (capable of potting), Discrete wire connectors; HRS No: 676-0036-6 00; No. of Positions: 12; Connector Type: Wire
CONNECTOR ACCESSORY
T-Bi-Pin T-1 Subminiature Lamps
T-1 subminiature, miniature flanged lamp. 1.35 volts, 0.220 amps.
T-1 subminiature, miniature flanged lamp. 2.5 volts, 0.320 amps.
T-1 subminiature, short type lamp. 5.0 volts, 0.060 amps.
|
International Light Technologies, Inc.
International Light Technologies Inc.
GILWAY[Gilway Technical Lamp]
http://
|
| BFY193 |
HIREL NPN SILICON RF TRANSISTOR (HIREL DISCRETE AND MICROWAVE SEMICONDUCTOR FOR LOW NOISE, HIGH GAIN BROADBAND AMPLIFIERS UP TO 2 GHZ.)
From old datasheet system
|
Siemens Semiconductor Group
Infineon
|
| RFS1006 PRFS-1006-0007 PRFS-1006-0008 PRFS-1006-00 |
3.4-3.6 GHz Power Amplifier 3400 MHz - 3600 MHz RF/MICROWAVE NARROW BAND MEDIUM POWER AMPLIFIER
3.4-3.6 GHz Power Amplifier 3号至三月六日GHz功率放大
Single-band power amplifiers
The RFS1006 power amplifier is a high-power, high-performance GaAs MESFET IC designed for use in a transmit applications in the 3.4-3.6 ...
|
ANADIGICS, Inc.
ANADIGICS[ANADIGICS, Inc]
ANADIGICS[ANADIGICS Inc]
|
| AWB7128 AWB7128P8 |
2.545 GHz through 2.69 GHz Small-Cell Power Amplifier Module
|
ANADIGICS, Inc
|
